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RHC25-8 PDF预览

RHC25-8

更新时间: 2024-11-10 03:36:59
品牌 Logo 应用领域
EDI 高压
页数 文件大小 规格书
2页 48K
描述
HIGH VOLTAGE DIFFUSED SILICON RECTIFIERS

RHC25-8 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.76外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):30 V
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:3 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:0.025 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:8000 V
最大反向恢复时间:0.1 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

RHC25-8 数据手册

 浏览型号RHC25-8的Datasheet PDF文件第2页 
LHC RHC  
HIGH VOLTAGE DIFFUSED SILICON RECTIFIERS  
SMALL SIZE MOLDED PACKAGE  
PRV 8,000 TO 40,000 VOLTS  
FAST RECOVERY (RHC SERIES)  
LOW LEAKAGE  
EDI Type No.  
Peak  
Max . Fwd. Volta ge  
Avg.  
o
Reve rse Volta ge  
PRV (Volts )  
Drop at 25 C And IO  
Fwd. Current,  
Case Sty le  
O
VF (Vol ts)  
IO at 50 C  
25mA  
30  
30  
30  
LHC25-8  
-10  
8,000  
10,0 00  
12,0 00  
15,0 00  
20,0 00  
25,000  
30,0 00  
35,0 00  
40,0 00  
A
A
A
B
B
B
C
C
C
-12  
-15  
60  
60  
-20  
-25  
60  
90  
90  
90  
-30  
-35  
-40  
RHC25-8  
-10  
8,000  
10,0 00  
12,0 00  
15,0 00  
20,0 00  
25,0 00  
30,0 00  
35,0 00  
40,0 00  
A
A
A
B
B
B
C
C
C
30  
30  
30  
-12  
-15  
60  
60  
-20  
-25  
60  
90  
90  
90  
-30  
-35  
-40  
RHC SERIES  
FAST  
LHC SERIES  
STANDARD  
ELECTRICAL CHARACTERISTICS  
ELECTRICAL CHARACTERISTICS  
(at T  
A
=25 C Unless Otherwise Specified)  
(at TA  
=25 C Unless Otherwise Specified)  
RECOVERY  
RECOVERY  
o
o
Max. DC Reverse Current @ PRV and 25 C, I  
A
1
C, I  
A
1
Max. DC Reverse Current @ PRV and 25  
Max. DC Reverse Current@ PRV and100  
Max. Reverse Recovery Time , t rr (Fig.4)  
R
R
o
o
C, I  
A
C, I  
Max. DC Reverse Current@ PRV and100  
A
R
60  
R
40  
o
o
to +150  
C
Ambient Operating Temperature Range,T  
A
100 nanosec  
-55  
C
o
o
to +150  
C
o
o
to +125  
C
-55  
Ambient Operating Temperature Range,TA  
Storage TemperatureRange, T  
STG  
C
-55  
-55  
C
o
o
to +150  
C
Max.One-Half Cycle Surge Current,  
IFM  
Storage Temperature Range, T  
STG  
C
Amps  
3
(Surge )@ 60Hz  
Max.One-HalfCycle Surge Current,  
IFM  
Amps  
3
(Surge )@ 60Hz  
NOTES:  
o
1. Maximum lead and terminal temperature for soldering, 3/8 inch from case, 5 seconds at 250 C.  
2. If operated over 10,000 v/inch in length, devices should be immersed in oil or re-encapsulated.  
EDI reserves the right to change these specifications at any time without notice.  

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