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RGPR30NS40HRTL PDF预览

RGPR30NS40HRTL

更新时间: 2024-11-11 20:10:43
品牌 Logo 应用领域
罗姆 - ROHM
页数 文件大小 规格书
11页 1368K
描述
Insulated Gate Bipolar Transistor,

RGPR30NS40HRTL 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.6峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RGPR30NS40HRTL 数据手册

 浏览型号RGPR30NS40HRTL的Datasheet PDF文件第2页浏览型号RGPR30NS40HRTL的Datasheet PDF文件第3页浏览型号RGPR30NS40HRTL的Datasheet PDF文件第4页浏览型号RGPR30NS40HRTL的Datasheet PDF文件第5页浏览型号RGPR30NS40HRTL的Datasheet PDF文件第6页浏览型号RGPR30NS40HRTL的Datasheet PDF文件第7页 
RGPR30NS40HR  
Datasheet  
400V 30A Ignition IGBT  
Outline  
LPDS (TO-263S) / TO-262  
BVCES  
IC  
40030V  
30A  
VCE(sat) (Typ.)  
EAS  
1.6V  
(1)  
(3)  
300mJ  
(1)(2)(3)  
Features  
Inner Circuit  
1) Low Collector - Emitter Saturation Voltage  
2) High Self-Clamped Inductive Switching Energy  
3) Built in Gate-Emitter Protection Diode  
4) Built in Gate-Emitter Resistance  
(2)  
(1) Gate  
(2) Collector  
(3) Emitter  
(1)  
5) Qualified to AEC-Q101  
(3)  
6) Pb - free Lead Plating ; RoHS Compliant  
Packaging Specifications  
Packaging  
Taping / Tube  
Reel Size (mm)  
330 / -  
24 / -  
Applications  
Ignition Coil Driver Circuits  
Tape Width (mm)  
Type  
Solenoid Driver Circuits  
Basic Ordering Unit (pcs) 1,000 / 1,000  
Packing Code  
Marking  
TL / C9  
RGPR30NS40  
Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)  
Parameter  
Collector - Emitter Voltage  
Symbol  
VCES  
VEC  
Value  
430  
Unit  
V
Emitter-Collector Voltage (VGE = 0V)  
Gate - Emitter Voltage  
25  
V
VGES  
IC  
V
10  
Collector Current  
30  
A
Tj = 25°C  
EAS  
300  
mJ  
mJ  
W
°C  
°C  
Avalanche Energy (Single Pulse)  
*2  
Tj = 150°C  
180  
EAS  
PD  
Tj  
Power Dissipation  
125  
Operating Junction Temperature  
Storage Temperature  
40 to +175  
55 to +175  
Tstg  
www.rohm.com  
© 2017 ROHM Co., Ltd. All rights reserved.  
2017.08 - Rev.B  
1/9  

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