Datasheet > RGPR30NS40HRTL

RGPR30NS40HRTL

更新时间： 2024-11-21 20:10:43

品牌	Logo	应用领域
罗姆 - ROHM		栅
页数	文件大小	规格书
11页	1368K
描述
Insulated Gate Bipolar Transistor,

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技术参数
数据手册

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RGPR30NS40HRTL 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	1.6	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

RGPR30NS40HRTL 数据手册

RGPR30NS40HR

Datasheet

400V 30A Ignition IGBT

Outline

LPDS (TO-263S) / TO-262

BV_CES

I_C

40030V

30A

(2)

V_{CE(sat) (Typ.)}

E_AS

1.6V

(1)

(3)

300mJ

(1)(2)(3)

Features

Inner Circuit

1) Low Collector - Emitter Saturation Voltage

2) High Self-Clamped Inductive Switching Energy

3) Built in Gate-Emitter Protection Diode

4) Built in Gate-Emitter Resistance

(2)

(1) Gate

(2) Collector

(3) Emitter

(1)

5) Qualified to AEC-Q101

(3)

6) Pb - free Lead Plating ; RoHS Compliant

Packaging Specifications

Packaging

Taping / Tube

Reel Size (mm)

330 / -

24 / -

Applications

Ignition Coil Driver Circuits

Tape Width (mm)

Type

Solenoid Driver Circuits

Basic Ordering Unit (pcs) 1,000 / 1,000

Packing Code

Marking

TL / C9

RGPR30NS40

Absolute Maximum Ratings (at T_C= 25°C unless otherwise specified)

Parameter

Collector - Emitter Voltage

Symbol

V_CES

V_EC

Value

430

Unit

Emitter-Collector Voltage (V_GE= 0V)

Gate - Emitter Voltage

V_GES

I_C

10

Collector Current

T_j= 25°C

E_AS

300

°C

Avalanche Energy (Single Pulse)

T_j= 150°C

180

E_AS

P_D

T_j

Power Dissipation

125

Operating Junction Temperature

Storage Temperature

40 to +175

55 to +175

T_stg

www.rohm.com

2017.08 - Rev.B

1/9

12 3 4 5 6 7...11

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