RGF1D

更新时间： 2024-02-18 11:30:50

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管光电二极管
页数	文件大小	规格书
4页	101K
描述
1.0 Ampere Fast Recovery Rectifiers

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技术参数
数据手册

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RGF1D 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.21
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

RGF1D 数据手册

RGF1A - RGF1M

Features

• Glass passivated junction.

• For surface mounted application.

• Low forward voltage drop.

• High current capability.

0.181 (4.597)

0.157 (3.988)

0.062 (1.575)

0.055 (1.397)

0.114 (2.896)

0.098 (2.489)

• Easy pick and place.

• High surge current capability.

3.93

3.73

0.208 (5.283)

0.188 (4.775)

SMA/DO-214AC

COLOR BAND DENOTES CATHODE

1.67

1.47

0.096 (2.438)

0.078 (1.981)

2.38

2.18

5.49

5.29

0.008 (0.203)

0.002 (0.051)

0.012 (0.305)

0.006 (0.152)

0.060 (1.524)

0.030 (0.762)

Minimum Recommended

Land Pattern

1.0 Ampere Fast Recovery Rectifiers

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

I_O

Average Rectified Current

@ T_L= 125°C

1.0

Peak Forward Surge Current

i_f(surge)

8.3 ms single half-sine-wave

Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient **

P_D

1.76

11.7

mW/°C

°C/W

R_θJA

R_θJL

T_stg

T_J

Thermal Resistance, Junction to Lead**

Storage Temperature Range

°C/W

°C

-65 to +175

Operating Junction Temperature

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

**Device mounted on FR-4 PCB 0.013 mm.

Electrical Characteristics

T_A= 25°C unless otherwise noted

Parameter

Device

Units

100

400

280

400

Peak Repetitive Reverse Voltage

Maximum RMS Voltage

200

140

200

600

420

600

800

560

800

1000

700

DC Reverse Voltage (Rated V_R)

Maximum Reverse Current

100

1000

5.0

100

@ rated V_R

T = 25 C

T = 125 C

Maximum Forward Voltage @ 1.0 A

1.3

Maximum Reverse Recovery Time

I_F= 0.5 A, I_R= 1.0 A, I_rr= 0.25 A

Typical Junction Capacitance

V_R= 4.0 V, f = 1.0 MHz

150

250

500

8.5

RGF1A-RGF1M, Rev. E

1998 Fairchild Semiconductor International

12 3 4

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