Datasheet > RGF1D

RGF1D

更新时间： 2024-02-20 08:11:48

品牌	Logo	应用领域
森美特 - SUNMATE		二极管光电二极管
页数	文件大小	规格书
2页	433K
描述
1A patch fast recovery diode 200V SMA series

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技术参数
数据手册

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RGF1D 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.21
Is Samacsys：	N	二极管类型：	RECTIFIER DIODE
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

RGF1D 数据手册

RGF1A - RGF1M

SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.0 A

Features

Glass Passivated Die Construction

Ideally Suited for Automatic Assembly

Low Forward Voltage Drop, High Efficiency

Low Power Loss

Fast Recovery Time

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMA(DO-214AC)

Dim

MinMax

Mechanical Data

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz resistive or inductive load.

Ratings at 25°C ambient temperature unless otherwise specified.

Characteristic

Unit RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit

V_RRM

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

V_RMS

V_DC

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

@ T_A= 75°C

I_(AV)

1.0

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC Method)

I_FSM

V_F

Maximum Instantaneous Forward Voltage at 1.0 A

1.3

Maximum DC Reverse Current at Rated

DC Blocking Voltage

@ T_A=25 °C

@ T_A= 125°C

5.0

100

I_R

Maximum Full Load Reverse Current Full Cycle

Average

@ T_A= 75°C

t_rr

R_QJL

C_J

Maximum Reverse Recovery Time (See Note 1)

MaximumThermal Resistance (See Note 2)

Typical Junction Capacitance (See Note 3)

Operating and Storage Temperature Rating

150

250

500

°C/W

T_J,T_STG

-65 to +175

°C

Notes:

1. Reverse Recovery Test Conditions: I_F= 0.5A, I_R= 1A, I_RR= 0.25A

2. Thermal Resistance from junction to lead with 6.0mm²copper pads

3. Measured at 1.0MHz and applied reverse voltage of 4.0V

1 of 2

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