RG100N650T7 PDF预览

RG100N650T7

更新时间: 2025-02-10 18:09:39
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
8页 448K
描述
Vdss (V) : 650 V;Id @ 25C (A) : 100 A;Total Gate Charge (nQ) typ : 280 nQ;Maximum Power Dissipation (W) : 428 W;Vgs(th) (typ) : 1.7 V;Input Capacitance (Ciss) : 6900 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247

RG100N650T7 数据手册

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ꢁꢂꢃꢄꢅꢆ ꢇꢈꢉꢀꢊꢋꢌꢍꢀ  
                                                                                     
RG100N650T7  
This IGBT is produced using advanced MagnaChip’s Field Stop  
Trench IGBT Technology, which provides high performance, excellent  
quality and high ruggedness.  
Features  
C : Collector  
G : Gate  
High ruggedness for motor control  
VCE(sat) positive temperature coefficient  
Very soft, fast recovery anti-parallel diode  
Low EMI  
E : Emitter  
Maximum junction temperature 175°C  
Applications  
PV Inverter  
UPS Power  
Welder  
Halogen-free  
G
C
E
ꢀ ꢀ  
Ordering Information  
Part Number  
Marking  
Package  
Packing  
TO-247  
-
100N650  
RG100N650T7  
Absolute Maximum Ratings(Ta=25 )  
Parameter  
Symbol  
Rating  
Unit  
V
A
A
A
Collector-emitter voltage  
VCE  
650  
100  
75  
225  
80  
TC=25°C  
TC=100°C  
DC collector current, limited by Tvjmax  
Pulsed collector current, tp limited by Tvjmax  
Diode forward current, limited by Tvjmax  
IC  
ICpuls  
IF  
TC=25°C  
TC=100°C  
A
50  
Diode pulsed current, tp limited by Tvjmax  
Gate-emitter voltage  
IFpuls  
VGE  
150  
20  
A
V
TC=25°C  
TC=100°C  
428  
214  
W
W
Power dissipation  
PD  
Short circuit withstand time  
VCC ˺ 360V, VGE = 15V, Tvj = 150°C  
tsc  
5
μs  
Operating Junction temperature range  
Storage temperature range  
Tvj  
Tstg  
-40~175  
-55~150  
°C  
°C  
Thermal Characteristics  
Parameter  
Thermal resistance junction-to-ambient  
Thermal resistance junction-to-case for IGBT  
Thermal resistance junction-to-case for Diode  
Symbol  
Rth(j-a)  
Rating  
40  
Unit  
Rth(j-c)  
0.35  
0.70  
°C/W  
Rth(j-c)  
2022-02/117  
REV:O  

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