Datasheet > RFV12TG6S

RFV12TG6S

更新时间： 2023-09-03 20:38:22

品牌	Logo	应用领域
罗姆 - ROHM		超快速恢复二极管功率因数校正
页数	文件大小	规格书
8页	399K
描述
RFV12TG6S是适用于PFC电路用途的超快速恢复二极管。

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中文翻译

获取价格

数据手册

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RFV12TG6S 数据手册

Super Fast Recovery Diode

RFV12TG6S

Data Sheet

lSerise

lDimensions (Unit : mm)

lStructure

4.5±0.1

f3.8±0.06

Standard Fast Recovery

10.2±0.2

1.28±0.06

lApplication

General rectification

RFV12

TG6S

For PFC

Cathode

Anode

(CCM : Continuous Current Mode)

lFeatures

2.6±0.1

Hyper fast recovery / Hard recovery type

1.4±0.2

2) Ultra low switching loss

3) High current overload capacity

0.6±0.1

0.06

0.10

2.54±0.1

0.83±

lConstruction

5.08±0.1

Silicon epitaxial planar type

ROHM : TO-220AC

: Manufacture year, week,day, package code

: Serial number

lAbsolute Maximum Ratings (T_a= 25°C)

Parameter

Repetitive peak reverse voltage

Reverse voltage

Symbol

Conditions

Duty≦0.5

Limits

Unit

V_RM

V_R

I_o

600

Direct reverse voltage

60Hz half sin wave , resistive load

Average current

60Hz half sin wave, one cycle, non-repetitive at T_j=25°C

Non-repetitive forward surge current I_FSM

120

150

T_j

Operating junction temperature

Storage temperature

°C

T_stg

-55 to +150 °C

lElectrical Characteristics (T_j= 25°C)

Parameter

Conditions

Symbol

V_F

Min. Typ. Max. Unit

T_j=25°C

T_j=125°C

T_j=25°C

T_j=125°C

1.6

2.3

2.8

I_F=12A

Forward voltage

1.55

0.03 10

I_R

V_R=600V

Reverse current

6.0

180

120

5.5

200

I_F=0.5A, I_R=1A, Irr=0.25×I_R

Reverse recovery time

trr

I_F=12A, V_R=400V, dI_F/dt=-200A/ms

I_F=12A, V_R=400V

T_j=125°C

I_Rp

Qrr

Reverse recovery current

Reverse recovery charges

Forward recovery time

dI_F/dt=-200A/ms

I_F=12A, dI_F/dt=200A/ms,

V_FR=1.1xV_Fmax

tfr

V_Fp

Forward recovery voltage

R_th(j-a)

R_th(j-c)

Junction to ambient

Junction to case

2.3 °C/W

1.4 °C/W

Thermal resistance

www.rohm.com

2014.10 - Rev.A

1/5

12 3 4 5 6 7 8

中文翻译

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