5秒后页面跳转
RFT2P03L PDF预览

RFT2P03L

更新时间: 2024-01-09 07:09:51
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关光电二极管
页数 文件大小 规格书
9页 95K
描述
2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET

RFT2P03L 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76其他特性:LOGIC LEVEL COMPATIBLE
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):2.1 A
最大漏源导通电阻:0.36 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RFT2P03L 数据手册

 浏览型号RFT2P03L的Datasheet PDF文件第2页浏览型号RFT2P03L的Datasheet PDF文件第3页浏览型号RFT2P03L的Datasheet PDF文件第4页浏览型号RFT2P03L的Datasheet PDF文件第5页浏览型号RFT2P03L的Datasheet PDF文件第6页浏览型号RFT2P03L的Datasheet PDF文件第7页 
RFT2P03L  
Data Sheet  
July 1999  
File Number 4574.2  
2.1A, 30V, 0.150 Ohm, P-Channel Logic  
Level, Power MOSFET  
Features  
• 2.1A, 30V  
This product is a P-Channel power MOSFET manufactured  
using the MegaFET process. This process, which uses  
feature sizes approaching those of LSI circuits, gives  
optimum utilization of silicon, resulting in outstanding  
performance. It was designed for use in applications such as  
switching regulators, switching converters, motor drivers,  
and relay drivers. This transistor can be operated directly  
from integrated circuits.  
• r  
= 0.150Ω  
DS(ON)  
®
Temperature Compensating PSPICE Model  
• Thermal Impedance SPICE Model  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
• Related Literature  
- TB334, “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly developmental type TA49222.  
Ordering Information  
Symbol  
PART NUMBER  
PACKAGE  
BRAND  
D
RFT2P03L  
SOT-223  
2P03L  
NOTE: RFT2P03L is available only in tape and reel. Use the entire  
part number and add the suffix T.  
G
S
Packaging  
SOT-223  
DRAIN  
(FLANGE)  
SOURCE  
DRAIN  
GATE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
PSPICE® is a registered trademark of MicroSim Corporation.  
7-7-19  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  

RFT2P03L 替代型号

型号 品牌 替代类型 描述 数据表
RFT2P03L136 FAIRCHILD

功能相似

Small Signal Field-Effect Transistor, 2.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal

与RFT2P03L相关器件

型号 品牌 获取价格 描述 数据表
RFT2P03L136 FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 2.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
RFT2P03LT INTERSIL

获取价格

TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2.1A I(D) | SOT-223
RFT3055 INTERSIL

获取价格

2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET
RFT3055LE INTERSIL

获取价格

2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET
RFT3100-1 ETC

获取价格

Analog IC
RFT3100-2 ETC

获取价格

Analog IC
RFT3100-3 ETC

获取价格

Analog IC
RFT6100 QUALCOMM

获取价格

MSM6150 CHIPSET SOLUTION
RFT6120 QUALCOMM

获取价格

MSM6150 CHIPSET SOLUTION
RFT6122 QUALCOMM

获取价格

RF CMOS SINGLE-BAND CHIPSET SOLUTION