Datasheet > RFT1950-08

RFT1950-08

更新时间： 2024-02-04 23:40:36

品牌	Logo	应用领域
RFHIC		放大器功率放大器
页数	文件大小	规格书
3页	157K
描述
Power Amplifier

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RFT1950-08 数据手册

Power Amplifier

RFT1950-08

Product Features

Application

• UMTS Repeater

• RF Sub-Systems

• Base Station

• Small size by using simple matching circuit board

• Single Supply Voltage

• Heat sink 99.9% copper, gold plated

• High Productivity

• Low Manufacturing Cost

• GaAs HFET

Package : DP-56

Description

The power amplifier module is designed for base stations and cell extenders and

operating frequency range is from 1.9GHz to 3.5GHz

GaAs HFET is used and attached on a copper sub carrier. It is connected by

using bias and in/out matching circuit method with gold wire bonding.

The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because

GaAs HFET is operated by low supply voltage whereas others are operated by high supply voltage.

For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.

This simplicity results cost competitiveness and performance enhancement.

Specifications

PARAMETER

RFT1950-08

Frequency Range (MHz)

Small Signal Gain (dB)

Gain Flatness (Max.)

Intput Return Loss

Output P1dB

1920 ~ 1980

± 1dB @ 50MHz BW

-10dB

38 dBm

W-CDMA Power (1 FA)

Output IP3

30dBm @ -45dBc ACLR

51dBm @ tone / 25dBm

Noise Figure (Typ.)

Drain Voltage

4 dB

Drain Current

1.5A

Operating Temp Range

Dimensions in mm

-20°C ~ +70°C

Functional Diagram

Dimensions (W×L×H)

32.0 × 44.0 × 10.0 [mm]

NOTE

*Test condition: 1950MHz, 3GPP W-CDMA signal modulation

Test Model 1, 64DPCH, 3.84MHz BW, ±5MHz offset

* RFT Series : Internally Matched Module

▪ Tel : 82-31-250-5011

▪ rfsales@rfhic.com

▪ All specifications may change without notice.

▪ Version 1.0

12 3

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