Datasheet > RFPA2226-EVB2

RFPA2226-EVB2

更新时间： 2024-12-02 01:05:15

品牌	Logo	应用领域
威讯 - RFMD		放大器
页数	文件大小	规格书
17页	1165K
描述
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER

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中文翻译

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RFPA2226-EVB2 数据手册

RFPA2226

2.2GHz to

2.7GHz 2W

InGaP AMPLI-

FIER

RFPA2226

2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER

Package: QFN

Features

 P_1dB=33.5dBm at 5V, 2.4GHz

RFPA2226

 802.11g 54Mb/s Class AB

Performance

 P_OUT=26dBm at 2.5% EVM,

V_CC5V

 P_OUT=27dBm at 2.5% EVM,

V_CC6V

 On-Chip Output Power Detector

 Input Prematched to ~5

 Proprietary Low Thermal

Resistance Package

Functional Block Diagram

 Hand Solderable and Easy

Rework

Product Description

RFMD’s RFPA2226 is a high linearity single stage class AB Heterojunction Bipolar

Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encap-

sulated package. This HBT amplifier is made with InGaP on GaAs device technology

and fabricated with MOCVD for an ideal combination of low cost and high reliability.

This product is specifically designed as a flexible final or driver stage for 802.16

and 802.11 equipment in the 2.2GHz to 2.7GHz bands. It can run from a 3V to 6V

supply. It is prematched to ~50 on the input for broadband performance and ease

of matching at the board level. It features an output power detector, on/off power

control, ESD protection, excellent overall robustness and a proprietary hand rework-

able and thermally enhanced QFN package. This product features a RoHS Compli-

ant and Green package with matte tin finish.

 Power Up/Down control <1s

Applications

 802.16 WiMAX Driver or Output

Stage

 2.4GHz 802.11 WiFi and ISM

Applications

Ordering Information

RFPA2226SQ

RFPA2226SR

RFPA2226

RFPA2226-EVB1

RFPA2226-EVB2

Standard 25-piece bag

Standard 100-piece reel

Standard 1000-piece reel

Evaluation Board 2.4GHz to 2.5GHz Tune

Evaluation Board 2.5GHz to 2.7GHz Tune

Optimum Technology Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

BiFET HBT

LDMOS



RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

DS121010

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与RFPA2226-EVB2相关器件

型号	品牌	获取价格	描述	数据表
RFPA2226SQ	RFMD	获取价格	2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
RFPA2226SR	RFMD	获取价格	2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
RFPA2235	RFMD	获取价格	Single-Stage Power Amplifier 2W, 700MHZ to 2700MHZ
RFPA2235PCK-410	RFMD	获取价格	Single-Stage Power Amplifier 2W, 700MHZ to 2700MHZ
RFPA2235PCK-411	RFMD	获取价格	Single-Stage Power Amplifier 2W, 700MHZ to 2700MHZ
RFPA2235PCK-412	RFMD	获取价格	Single-Stage Power Amplifier 2W, 700MHZ to 2700MHZ
RFPA2235SQ	RFMD	获取价格	Single-Stage Power Amplifier 2W, 700MHZ to 2700MHZ
RFPA2235SR	RFMD	获取价格	Single-Stage Power Amplifier 2W, 700MHZ to 2700MHZ
RFPA2235TR13	RFMD	获取价格	Single-Stage Power Amplifier 2W, 700MHZ to 2700MHZ
RFPA2545	RFMD	获取价格	Broadband 4W GaAs HBT Power Amplifier 1400MHz to 2700MHz

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