RFPA2189
GaAs HBT
Power Ampli-
fier 0.5W,
400MHz to
2700MHz
RFPA2189
GaAs HBT POWER AMPLIFIER
0.5W, 400MHz to 2700MHz
Package: SOT-89
GND
4
Features
-60dBc ACPR at 16dBm WCDMA
0.5W Output Power (P1dB)
Excellent Linearity to DC Power
Ratio
NF=3.0dB at 880MHz
Single-Supply 5V Operation
Class 1C (1000V) HBM ESD
2
3
1
Applications
GaAs Pre-Driver for Base Station
Amplifiers
RFIN
GND RFOUT/VCC
Functional Block Diagram
PA Stage for Commercial
Wireless Infrastructure
Product Description
2nd or 3rd Stage LNAs
The RFPA2189 is a single-stage GaAs HBT power amplifier specifically designed for
Wireless Infrastructure applications. It offers ultra-linear operation at a comparably
low DC power making it ideal for next generation radios requiring high efficiency. Its
external matching allows for use across various radio platforms within 400MHz to
2700MHz. The RFPA2189 offers low noise figure making it an excellent solution for
2nd and 3rd stage LNAs.
Class AB Operation for GSM,
DCS, PCS, UMTS, WiMAX, LTE
Transceiver Applications
Ordering Information
RFPA2189SR
RFPA2189SQ
RFPA2189TR7
7” Reel with 100 pieces
Sample bag with 25 pieces
7” Reel with 2500 pieces
RFPA2189PCK-410 869MHz to 894MHz PCBA with 5-piece sample bag
RFPA2189PCK-411 2110MHz to 2170MHz PCBA with 5-piece sample bag
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110420
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