Datasheet > RFP45N02L

RFP45N02L

更新时间： 2024-11-25 22:15:23

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关局域网
页数	文件大小	规格书
8页	82K
描述
45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs

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RFP45N02L 数据手册

RFP45N02L,

RF1S45N02L, RF1S45N02LSM

45A, 20V, 0.022 Ohm, N-Channel

Logic Level Power MOSFETs

May 1997

Features

Description

• 45A, 20V

• r = 0.022Ω

The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are

N-Channel power MOSFETs manufactured using the

MegaFET process. This process, which uses feature sizes

DS(ON)

approaching those of LSI circuits, gives optimum utilization

of silicon, resulting in outstanding performance. They were

designed for use in applications such as switching

regulators, switching converters, motor drivers and relay

drivers. These transistors can be operated directly from inte-

grated circuits.

• Temperature Compensating PSPICE Model

• Can be Driven Directly from CMOS, NMOS, and TTL

Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Formerly developmental type TA49243.

• 175 C Operating Temperature

Ordering Information

Symbol

PART NUMBER

RFP45N02L

PACKAGE

TO-220AB

BRAND

FP45N02L

RF1S45N02L

TO-262AA

TO-263AB

F45N02L

RF1S45N02LSM

NOTE: When ordering, use the entire part number. Add the sufﬁx,

9A, to obtain the TO-263AB variant in tape and reel, e.g.

RF1S45N02LSM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-262AA

SOURCE

DRAIN

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

File Number 4342

12 3 4 5 6 7 8

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