Datasheet > RFMD2080TR7

RFMD2080TR7

更新时间： 2024-01-21 18:33:06

品牌	Logo	应用领域
威讯 - RFMD		/
页数	文件大小	规格书
19页	4042K
描述
45MHz TO 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO AND BASEBAND INTERFACE`

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RFMD2080TR7 数据手册

RFMD2080

45MHz TO 2700MHz IQ MODULATOR WITH

SYNTHESIZER/VCO AND BASEBAND INTERFACE

Package: QFN, 32-Pin, 5mm x 5mm

Features

 RF Output Frequency Range

45MHz to 2700MHz

Phase

Synth

det.

 Fractional-N Synthesizer with

Very Low Spurious Levels

 Typical Step Size 1.5Hz

 Fully Integrated Wideband VCOs

and LO Buffers

Ref.

divider

 Integrated Phase Noise

<0.2° rms at 1GHz

 Integrated Baseband

Amplification Stage with Variable

Gain and Filtering

Functional Block Diagram

 Tunable Baseband Filters Input

3dB Bandwidth from 1.5MHz to

10MHz

Product Description

The RFMD2080 is a low power, highly integrated, IQ modulator with integrated fractional-N syn-

thesizer and voltage controlled oscillator (VCO). The RFMD2080 can generate output frequen-

cies of between 45MHz and 2700MHz, making it suitable for a wide range of applications.

 -45dBc Unadjusted Carrier

Suppression

 -40dBc Unadjusted Sideband

The fractional-N synthesizer takes advantage of an advanced sigma-delta architecture that

delivers ultra-fine step sizes and low spurious products. The synthesizer/VCO combined with an

external loop filter allows the user to generate an oscillator signal covering 90MHz to 5400MHz.

The signal is buffered and routed to a high accuracy quadrature divider (/2) that drives the bal-

anced I and Q mixers. The output of the mixers are summed and applied to a differential RF out-

put stage. The device also features a differential input for an external VCO or LO source.

Suppression

 Very Low Noise Floor

-150dBm/Hz Typical

 Output P1dB +4dBm

 Output IP3 +18dBm

The baseband I and Q stages are highly integrated; featuring variable gain and filtering as well

as generation of DC offset voltages. The programmable DC offsets enable improved carrier sup-

pression. The baseband input 3dB bandwidth can be tuned from 1.5MHz to 10MHz, and the

total gain control range is 38dB with 2dB resolution.

 3.0V to 3.3V Power Supply

 155mA Typical Current

Consumption

Device programming is achieved via a simple 3-wire serial interface. In addition, a unique pro-

gramming mode allows up to four devices to be controlled from a common serial bus. This elim-

inates the need for separate chip-select control lines between each device and the host

controller. Up to six general purpose outputs are provided, which can be used to access internal

signals (the LOCK signal, for example) or to control front end components. The device is opti-

mized for low power operation, consuming typically only 155mA from a 3V supply.

 Serial Programming Interface

Applications

 Satellite Communications

 QPSK/QAM Modulators

 SSB Modulators

 Software Defined Radios

Optimum Technology Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

LDMOS



RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2011, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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