Datasheet > RFM4N35

RFM4N35

更新时间： 2024-11-17 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
4页	42K
描述
4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

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RFM4N35 数据手册

RFM4N35, RFM4N40, RFP4N35, RFP4N40

Semiconductor

Data Sheet

October 1998

File Number 1491.3

4A, 350V and 400V, 2.000 Ohm, N-Channel

Power MOSFETs

Features

• 4A, 350V and 400V

• r = 2.000Ω

[ /Title

These are N-channel enhancement-mode silicon-gate

power ﬁeld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

DS(ON)

• Related Literature

(RFM4N

()

35,

/Sub-

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

RFM4N relay drivers, and drivers for high power bipolar switching

ject ()

transistors requiring high speed and low gate-drive power.

40,

/Autho

These types can be operated directly from integrated

circuits.

RFP4N3

r ()

Symbol

/Key-

RFP4N4

Formerly developmental type TA17404.

words

()

Ordering Information

/Subject

/Cre-

PART NUMBER

PACKAGE

BRAND

RFM4N35

(4A,

ator ()

RFM4N35

TO-204AA

350V

/DOCI

RFM4N40

TO-204AA

TO-220AB

RFM4N40

RFP4N35

RFP4N40

and

NFO

RFP4N35

400V,

pdf-

RFP4N40

2.000

mark

NOTE: When ordering, use the entire part number.

Ohm, N-

Channel

[

Power

/Page-

Packaging

MOS-

Mode

JEDEC TO-204AA

JEDEC TO-220AB

FETs)

/Use-

SOURCE

DRAIN

GATE

/Author

Out-

DRAIN

(FLANGE)

()

lines

DRAIN

(FLANGE)

/Key-

/DOC-

words

VIEW

(Harris

pdf-

Semi-

mark

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

SOURCE (PIN 2)

GATE (PIN 1)

204AA,

TO-

220AB)

/Creator

()

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4

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