Datasheet > RFM12U7X

RFM12U7X

更新时间： 2024-09-23 12:23:07

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
5页	182K
描述
VHF- and UHF-band Amplifier Applications

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数据手册

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RFM12U7X 数据手册

RFM12U7X

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

RFM12U7X

VHF- and UHF-band Amplifier Applications

Unit: mm

(Note)The TOSHIBA products listed in this document are intended for high

frequency Power Amplifier of telecommunications equipment. These

TOSHIBA products are neither intended nor warranted for any other use.

Do not use these TOSHIBA products listed in this document except for

high frequency Power Amplifier of telecommunications equipment.

•

Output power: P = 12 W (typ.)

Gain: G = 10.8 dB (typ.)

Drain efficiency: η = 60% (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Gate-source voltage

Drain current

GSS

PW-X

Power dissipation

P *

°C

JEDEC

JEITA

―

Channel temperature

Storage temperature range

150

stg

−45 to 150

TOSHIBA

2-5N1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.08 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)

Marking

Type name

Dot

Lo No.

1. Gate

2. Source (heat sink)

3. Drain

Caution

Please take care to avoid generating static electricity when handling this transistor.

2009-01-30

12 3 4 5

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