是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | 风险等级: | 5.75 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 12 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 150 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RFM12P08 | VISHAY |
获取价格 |
P-CHANNEL ENHANCEMENT-MODE | |
RFM12P10 | ROCHESTER |
获取价格 |
12A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
RFM12U7X | TOSHIBA |
获取价格 |
VHF- and UHF-band Amplifier Applications | |
RFM15N05 | ETC |
获取价格 |
POWER LOGIC LEVEL MOSFETS | |
RFM15N05L | RENESAS |
获取价格 |
15A, 50V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
RFM15N06 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-3 | |
RFM15N06L | RENESAS |
获取价格 |
15A, 60V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
RFM15N12 | GE |
获取价格 |
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSSITORS | |
RFM15N12 | NJSEMI |
获取价格 |
Trans MOSFET N-CH 50V 15A | |
RFM15N15 | GE |
获取价格 |
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSSITORS |