Datasheet > RFM12N10

RFM12N10

更新时间： 2024-11-25 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
5页	47K
描述
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

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RFM12N10 数据手册

RFM12N08, RFM12N10, RFP12N08, RFP12N10

Semiconductor

Data Sheet

October 1998

File Number 1386.2

12A, 80V and 100V, 0.200 Ohm, N-Channel

Power MOSFETs

Features

• 12A, 80V and 100V

• r = 0.200Ω

[ /Title

(RFM12

N08,

RFM12

N10,

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

DS(ON)

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

RFP12

N08,

Symbol

RFP12

N10)

Formerly developmental type TA09594.

/Sub-

ject

Ordering Information

PART NUMBER

RFM12N08

PACKAGE

TO-204AA

BRAND

RFM12N08

(12A,

80V and

100V,

0.2

Ohm,

N-Chan-

nel

RFM12N10

TO-204AA

TO-220AB

RFM12N10

RFP12N08

RFP12N10

RFP12N08

RFP12N10

NOTE: When ordering, use the entire part number.

Power

MOS-

FETs) Packaging

/Author

()

/Key-

JEDEC TO-204AA

JEDEC TO-220AB

SOURCE

DRAIN

(FLANGE)

DRAIN

GATE

(TAB)

words

(Harris

Semi-

conduc-

tor, N-

Chan-

SOURCE (PIN 2)

GATE (PIN 1)

nel

Power

MOS-

FETs,

TO-

204AA,

TO-

220AB)

/Cre-

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5

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