Datasheet > RFM10N45

RFM10N45

更新时间： 2024-11-22 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
4页	35K
描述
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

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RFM10N45 数据手册

RFM10N45,

RFM10N50

Semiconductor

10A, 450V and 500V, 0.600 Ohm,

N-Channel Power MOSFETs

September 1998

Features

Description

• 10A, 450V and 500V

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated cir-

cuits.

[ /Title

(RFM10

N45,

RFM10

N50)

/Subject

(10A,

450V

• r

DS(ON)

= 0.600Ω

Ordering Information

PART NUMBER

RFM10N45

RFM10N50

PACKAGE

BRAND

RFM10N45

RFM10N50

Formerly developmental type TA17435.

TO-204AA

and

500V,

0.600

Symbol

NOTE: When ordering, include the entire part number.

Ohm, N-

Channel

Power

MOS-

FETs)

/Author

()

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

SOURCE (PIN 2)

GATE (PIN 1)

204AA)

/Creator

()

/DOCIN

FO pdf-

mark

[ /Page-

Mode

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 1788.1

5-1

12 3 4

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