Datasheet > RFM0882-10

RFM0882-10

更新时间： 2024-11-05 06:07:35

品牌	Logo	应用领域
RFHIC		放大器功率放大器
页数	文件大小	规格书
3页	213K
描述
Power Amplifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RFM0882-10 数据手册

Power Amplifier

RFM0882-10

Product Features

Application

• Cellular Repeater

• RF Sub-Systems

• Base Station

• Small size by using simple matching circuit board

• High Efficiency

• Single Supply Voltage

• High Linearity, 10W Power

• Heat sink 99.9% copper, gold plate

• High Productivity

Package : DP-36

• Low Manufacturing Cost

• GaAs MESFET

Description

The power amplifier module is designed for base stations and cell extenders

as cellular and GSM , IMT-2000, ISM, MMDS frequency systems.

GaAs MESFET is used and attached on a copper sub carrier. It is connected by

using bias and in/out matching circuit method with gold wire bonding.

The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because

GaAs MESFET is operated by low supply voltage whereas others are operated by high supply voltage.

For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.

This simplicity results cost competitiveness and performance enhancement.

Specifications

PARAMETER

Min

Typ

Max

Frequency Range (MHz)

Small Signal Gain (dB)

Gain Flatness (Max.)

869 ~ 894

± 0.5dB @ 50MHz BW

Gain Variation Over Temp

VSWR (Input)

± 0.5dB

2 : 1

± 1.0dB

Output P1dB

37 dBm

49 dBm

38 dBm

CDMA Power (1 FA)

Vcc / Idc (CDMA Only)

OIP3 @ tone / 27 dBm

Noise Figure (Typ.)

32 dBm

9V / 1.2A

50 dBm

5 dB

Shut Down (On/Off)

＋5V @ 25㎂ / 0V

In/Out Connectors

Dimensions in mm

Operating Temp Range

SMA Female (50 Ω)

Functional Diagram

-20°C ~ +70°C

29.0 × 30.2 × 9.0 [mm] (RFM)

48.0 × 54.2 × 22.0 [mm] (RFH)

Dimensions (W×L×H)

NOTE

* CDMA : 1.23MHz symbol rate ; Forward Link ; 9 Channels, Multi tone Available

@ ±750KHz offset in 30KHz resolution bandwidth

@ ±1.98MHz offset in 30KHz resolution bandwidth

* RFM : Internally Matched Module

* RFH : Housing Type

: RF Connector

: SMA Female

▪ Tel : 82-31-250-5011

▪ rfsales@rfhic.com

▪ All specifications may change without notice.

▪ Version 5.3

12 3

中文翻译

下载PDF

与RFM0882-10相关器件

型号	品牌	获取价格	描述	数据表
RFM08U9X	TOSHIBA	获取价格	RF POWER MOSFET FOR VHF.AND UHF.BAND POWER AMPLIFIER
RFM0902-10	RFHIC	获取价格	Power Amplifier
RFM0947-10	RFHIC	获取价格	Power Amplifier
RFM10N12	GE	获取价格	N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
RFM10N12	NJSEMI	获取价格	10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS
RFM10N12L	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 120V V(BR)DSS \| 10A I(D) \| TO-3
RFM10N15	GE	获取价格	N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
RFM10N15	NJSEMI	获取价格	10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS
RFM10N15L	NJSEMI	获取价格	10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS
RFM10N45	INTERSIL	获取价格	10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs