Datasheet > RFM04U6P

RFM04U6P

更新时间： 2024-11-23 12:23:07

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
5页	205K
描述
VHF- and UHF-band Amplifier Applications

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数据手册

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RFM04U6P 数据手册

RFM04U6P

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

RFM04U6P

VHF- and UHF-band Amplifier Applications

Unit: mm

(Note)The TOSHIBA products listed in this document are intended for high

frequency Power Amplifier of telecommunications equipment.These

TOSHIBA products are neither intended nor warranted for any other

use.Do not use these TOSHIBA products listed in this document except for

high frequency Power Amplifier of telecommunications equipment.

•

Output power: P = 4.3W (typ)

Gain: G = 13.3dB (typ)

Drain efficiency: η = 70% (typ)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Gain-source voltage

Drain current

GSS

PW-Mini

Power dissipation

(Note 1)

°C

JEDEC

JEITA

―

Channel temperature

Storage temperature range

150

SC-62

stg

−45 to 150

TOSHIBA

2-5K1D

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.05 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Tc = 25°C (When mounted on a 0.4 mm glass epoxy PCB with heat sink)

Marking

Part No. (or abbreviation code)

Ｗ

Ｆ

Lot No.

1. Gate

2. Source

3. Drain

Caution: This device is sensitive to electrostatic discharge.

Please make enough tool and equipment earthed when you handle.

2009-11-03

12 3 4 5

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