Datasheet > RFM0415-10

RFM0415-10

更新时间： 2024-11-23 06:07:35

品牌	Logo	应用领域
RFHIC		放大器功率放大器
页数	文件大小	规格书
3页	212K
描述
Power Amplifier

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RFM0415-10 数据手册

Power Amplifier

RFM0415-10

Product Features

Application

• Small size by using simple matching circuit board

• High Efficiency

• Single Supply Voltage

• TRS

• RF Sub-Systems

• Base Station

• High Linearity, 10W Power

• Heat sink 99.9% copper, gold plate

• High Productivity

Package : DP-36

• Low Manufacturing Cost

• GaAs MESFET

Description

The power amplifier module is designed for base stations and cell extenders

as cellular and TRS, GSM , IMT-2000, ISM, MMDS frequency systems.

GaAs MESFET is used and attached on a copper sub carrier. It is connected by

using bias and in/out matching circuit method with gold wire bonding.

The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because

GaAs MESFET is operated by low supply voltage whereas others are operated by high supply voltage.

For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.

This simplicity results cost competitiveness and performance enhancement.

Specifications

PARAMETER

Min

Typ

Max

Frequency Range (MHz)

Small Signal Gain (dB)

Gain Flatness (Max.)

380 ~ 450

± 0.5dB @ 50MHz BW

Gain Variation Over Temp

VSWR (Input)

± 0.5dB

2 : 1

± 1.0dB

Output P1dB

37dBm

48 dBm

38 dBm

Vcc / Idc

9V / 1.2A

49 dBm

OIP3 @ tone / 27 dBm

Noise Figure (Typ.)

Shut Down (On/Off)

In/Out Connectors

5 dB

＋5V @ 25㎂ / 0V

SMA Female (50 Ω)

Operating Temp Range

-20°C ~ +70°C

Dimensions in mm

Functional Diagram

29.0 × 30.2 × 9.0 [mm] (RFM)

48.0 × 54.2 × 22.0 [mm] (RFH)

Dimensions (W×L×H)

NOTE

* RFM : Internally Matched Module

* RFH : Housing Type

: RF Connector

: SMA Female

▪ Tel : 82-31-250-5011

▪ rfsales@rfhic.com

▪ All specifications may change without notice.

▪ Version 5.4

12 3

中文翻译

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