RFM03U3P
Field Effect Transistors Silicon N-Channel MOS
RFM03U3P
1. Applications
•
VHF/UHF-Band Power Amplifiers
Note: This product is intended for radio-frequency power amplifiers of telecommunications equipment. This product
is neither intended nor warranted for any other use. Do not use this product except for radio-frequency power
amplifiers of telecommunications equipment.
2. Features
(1) Output power: PO = 3.0 W (typ.)
(2) High gain: GPS = 14.8 dB (typ.)
(3) Drain efficiency: ηD = 60 % (typ.)
3. Packaging and Internal Circuit
1: Gate
2: Source
3: Drain
PW-Mini
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Drain-source voltage
Symbol
Note
Rating
Unit
VDSS
VGSS
ID
16
V
V
Gate-source voltage
Drain current
3
2.5
A
Power dissipation
Channel temperature
Storage temperature
PD
(Note 1)
7
W
Tch
150
Tstg
-45 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tc = 25 (When mounted on a 0.4 mm (t) glass-epoxy PCB with heatsink)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
Note: Care should be taken not to drop this device because it is sensitive to dropping impact stress.
Start of commercial production
2015-04
©2015 Toshiba Corporation
2015-09-11
Rev.1.0
1