Datasheet > RFM03U3P

RFM03U3P

更新时间： 2024-11-24 14:56:43

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	291K
描述
Not Recommended for New Design

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RFM03U3P 数据手册

RFM03U3P

Field Effect Transistors Silicon N-Channel MOS

RFM03U3P

1. Applications

•

VHF/UHF-Band Power Amplifiers

Note: This product is intended for radio-frequency power amplifiers of telecommunications equipment. This product

is neither intended nor warranted for any other use. Do not use this product except for radio-frequency power

amplifiers of telecommunications equipment.

2. Features

(1) Output power: PO = 3.0 W (typ.)

(2) High gain: GPS = 14.8 dB (typ.)

(3) Drain efficiency: ηD = 60 % (typ.)

3. Packaging and Internal Circuit

1: Gate

2: Source

3: Drain

PW-Mini

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Drain-source voltage

Symbol

Note

Rating

Unit

VDSS

VGSS

Gate-source voltage

Drain current

2.5

Power dissipation

Channel temperature

Storage temperature

(Note 1)



Tch

150

Tstg

-45 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Tc = 25  (When mounted on a 0.4 mm (t) glass-epoxy PCB with heatsink)

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

Note: Care should be taken not to drop this device because it is sensitive to dropping impact stress.

Start of commercial production

2015-04

2015-09-11

Rev.1.0

12 3 4 5 6

中文翻译

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