Datasheet > RF5L15120CB4

RF5L15120CB4

更新时间： 2024-09-16 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	971K
描述
120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz

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RF5L15120CB4 数据手册

RF5L15120CB4

Datasheet

120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz

Features

OUT

Order code

Frequency

Gain

Efficiency

RF5L15120CB4

1000 MHz

50 V

120 W

20 dB

60%

•

High efficiency and linear gain operations

Integrated ESD protection

Large positive and negative gate/source voltage range

Excellent thermal stability, low HCI drift

LBB

In compliance with the european directive 2002/95/EC

Pin connection

Connection

Applications

•

Broadband commercial communications

Drain A

Drain B

TV broadcast

Avioncs

Source (bottom side)

Gate B

Industrial

Gate A

Description

The RF5L15120CB4 is a 120 W LDMOS FET, designed for broadband commercial

communications, TV Broadcast, Avionics and industrial applications with frequencies

from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical

modulation formats.

Product status link

RF5L15120CB4

Product summary

Order code

Marking

RF5L15120CB4

LBB

Package

Packing

Tape and reel 13"

100/100

Base/bulk quantity

DS13384 - Rev 1 - June 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...11

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