Datasheet > RF5L15030CB2

RF5L15030CB2

更新时间： 2024-11-06 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	921K
描述
30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor

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RF5L15030CB2 数据手册

RF5L15030CB2

Datasheet

30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor

Features

OUT

Order code

Frequency

Gain

Efficiency

RF5L15030CB2

1 GHz

50 V

30 W

23.5 dB

50%

•

High efficiency and linear gain operations

Integrated ESD protection

Large positive and negative gate-source voltage range for improved class C

operation

GXB

•

In compliance with the European directive 2002/95/EC

Pin connection

Applications

Connection

•

Industrial, scientific and medical from HF to 1.5 GHz

Drain

FM and TV broadcast

Source (bottom side)

Gate

HV/VHF ground communications

Avionics and L-band radar

Wideband communications

Description

The RF5L15030CB2 is a 30 W, 50 V, LDMOS FET designed for applications in the

frequency range from HF to 1.5 GHz. It can be used in class AB, B or C for all typical

modulation formats.

Product status link

RF5L15030CB2

Product summary

Order code

Marking

RF5L15030CB2

5L15030

Package

GXB

Packing

Tape and reel 13"

180/180

Base/bulk quantity

DS13641 - Rev 2 - September 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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