Datasheet > RF5L1214750CB4

RF5L1214750CB4

更新时间： 2024-11-06 14:57:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	2397K
描述
750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor

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RF5L1214750CB4 数据手册

RF5L1214750CB4

Datasheet

750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor

Features

OUT

Order code

Frequency

Gain

Efficiency

RF5L1214750CB4

1300 MHz

50 V

750 W

15 dB

53%

•

High efficiency and linear gain operations

Integrated ESD protection

Internally matched pair transistors in push-pull configuration

Large positive and negative gate-source voltage range for improved class C

operation

D4E

•

Excellent thermal stability, low HCI drift

Pin connection

In compliance with the European directive 2002/95/EC

Connection

Drain A

Applications

Drain B

•

L-Band radar

Source (bottom side)

Gate B

From 1300 to 1500 MHz particle accelerator

Gate A

Description

The RF5L1214750CB4 is a 750 W, 50V high performance LDMOS FET, designed for

L-Band radar and particle accelerator in the frequency range from 1300 to 1500 MHz.

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RF5L1214750CB4

Product summary

Order code

Marking

RF5L1214750CB4

5L1214750

D4E

Package

Packing

Tray

Base/bulk quantity

20/100

DS13650 - Rev 2 - September 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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