Datasheet > RF5L08600CB4

RF5L08600CB4

更新时间： 2024-09-16 14:57:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	2027K
描述
650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

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RF5L08600CB4 数据手册

RF5L08600CB4

Datasheet

650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Features

OUT

Order code

Frequency

Gain

Efficiency

RF5L08600CB4

650 MHz

50 V

650 W

19.5 dB

67%

•

High efficiency and linear gain operations

Integrated ESD protection

Internally matched pair transistors in push-pull configuration

Large positive and negative gate-source voltage range for improved class C

operation

D4E

•

Excellent thermal stability, low HCI drift

Pin connection

In compliance with the european directive 2002/95/EC

Connection

Drain A

Applications

Drain B

•

Wideband lab amplifier from 0.4 to 1 GHz

Source (bottom side)

Gate B

Digital UHF TV 470-860 MHz

650 MHz particle accelerator

915 MHz RF energy applications

Gate A

Description

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS

FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

Product status link

RF5L08600CB4

Product summary

Order code

Marking

RF5L08600CB4

5L08600

D4E

Package

Packing

Tray

Base/bulk quantity

20/100

DS13635 - Rev 2 - May 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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