Datasheet > RF5L08350CB4

RF5L08350CB4

更新时间： 2024-11-06 14:57:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	1180K
描述
400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

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RF5L08350CB4 数据手册

RF5L08350CB4

Datasheet

400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

Features

OUT

Order code

Frequency

Gain

Efficiency

RF5L08350CB4

860 MHz

50 V

400 W

19 dB

61%

•

High efficiency and linear gain operations

Integrated ESD protection

Internally matched for ease of use

B4E

Large positive and negative gate-source voltage range for improved class C

operation

Pin connection

•

Excellent thermal stability, low HCI drift

Connection

Drain A

In compliance with the European Directive 2002/95/EC

Drain B

Applications

Source (bottom side)

Gate B

•

Wideband lab amplifier from 0.4 to 1 GHz

Digital UHF TV 470-860 MHz

650 MHz particle accelerator

915 MHz RF energy applications

Gate A

Description

The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS

FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

Product status link

RF5L08350CB4

Product summary

Order code

Marking

RF5L08350CB4

5L08350

Package

B4E

Packing

Tape and reel 13"

120/120

Base/bulk quantity

DS13248 - Rev 2 - September 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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