Datasheet > RF5L05750CF2

RF5L05750CF2

更新时间： 2024-11-06 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体管
页数	文件大小	规格书
12页	1633K
描述
750 W，50 V，HF至500 MHz RF功率LDMOS晶体管

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RF5L05750CF2 数据手册

RF5L05750CF2

Datasheet

750 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features

OUT

Order code

Frequency

Gain

Efficiency

RF5L05750CF2⁽¹⁾

108 MHz

50 V

1500 W

20 dB

78%

1. Measured on 88-108 MHz wideband test board with two RF5L05750CF2 devices connected

in push-pull.

•

High efficiency and linear gain operations

Integrated ESD protection

Large positive and negative gate-source voltage range for improved class C

operation

Pin connection

•

Excellent thermal stability, low HCI drift

Connection

Gate

In compliance with the european directive 2002/95/EC

Drain

Applications

Source (bottom side)

•

30-88 MHz/136-174 MHz ground communication

1.6-30 MHz HF transceiver

Plasma generator

Particle accelerator

FM and VHF TV broadcast

Description

The RF5L05750CF2 is a 750 W, 50 V, high performance, unmatched LDMOS FET,

designed for wideband commercial and industrial applications in the frequency range

from HF to 500 MHz. It can be used for both CW and pulse application. It is featured

for high power and high ruggedness, suitable for industrial, scientific and medical

application, as well as FM radio, VHF TV and aerospace applications.

Product status link

RF5L05750CF2

Product summary

Order code

Marking

RF5L05750CF2

5L05750

Package

Packing

Tape and reel 13"

100/100

Base/bulk quantity

DS13746 - Rev 2 - December 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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