Datasheet > RF5L05500CB4

RF5L05500CB4

更新时间： 2024-11-06 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	529K
描述
550 W, 50 V, HF to 250 MHz RF Power LDMOS transistor

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RF5L05500CB4 数据手册

RF5L05500CB4

Datasheet

500 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features

OUT

Order code

Frequency

Gain

Efficiency

RF5L05500CB4

108 MHz

50 V

500 W

19 dB

70%

•

High efficiency and linear gain operations

Integrated ESD protection

Large positive and negative gate-source voltage range for improved class C

operation

LBB

•

In compliance with the European directive 2002/95/EC

Pin connection

Connection

Applications

•

30-88 MHz/136-174 MHz ground communication

Drain A

Drain B

Plasma generator

Particle accelerator

Source (bottom side)

Gate B

FM and VHF TV broadcast

Gate A

Description

The RF5L05500CB4 is a 500 W, 50 V, high performance LDMOS FET designed for

multiple applications in the frequency range from HF to 500 MHz.

Product status link

RF5L05500CB4

Product summary

Order code

Marking

RF5L05500CB4

5L05500

Package

LBB

Packing

Tape and reel 13"

100/100

Base/bulk quantity

DS13379 - Rev 2 - October 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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