Datasheet > RF5L051K0CB4

RF5L051K0CB4

更新时间： 2024-09-16 14:58:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	1043K
描述
1 kW, 50 V, HF to 250 MHz RF Power LDMOS transistor

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RF5L051K0CB4 数据手册

RF5L051K0CB4

Datasheet

1000 W, 50 V, HF to 500 MHz RF power LDMOS transistor

Features

OUT

Order code

Frequency

Gain

Efficiency

RF5L051K0CB4

108 MHz

50 V

1000 W

21 dB

77%

•

High efficiency and linear gain operations

Integrated ESD protection

Large positive and negative gate-source voltage range for improved class C

operation

D4E

•

On chip RC network enable high stability and ruggedness

Excellent thermal stability, low HCI drift

Pin connection

In compliance with the european directive 2002/95/EC

Connection

Drain A

Applications

Drain B

•

30-88 MHz/136-174 MHz ground communication

Source (bottom side)

Gate B

1.6-30 MHz HF transceiver

Plasma generator

Particle accelerator

Gate A

FM and VHF TV broadcast

Description

The RF5L051K0CB4 is a 1000 W, 50 V, high performance, unmatched LDMOS FET,

designed for wideband commercial and industrial applications in the frequency range

from HF to 500 MHz. It can be used for both CW and pulse application. It is featured

for high power and high ruggedness, suitable for industrial, scientific and medical

application, as well as FM radio, VHF TV and aerospace applications.

Product status link

RF5L051K0CB4

Product summary

Order code

Marking

RF5L051K0CB4

5L051K0

D4E

Package

Packing

Tray

Base/bulk quantity

20/100

DS13744 - Rev 2 - October 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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