Datasheet > RF5824

RF5824

更新时间： 2024-09-13 03:37:15

品牌	Logo	应用领域
威讯 - RFMD		放大器功率放大器 WLAN 无线局域网
页数	文件大小	规格书
2页	40K
描述
3.3V, DUAL-BAND WLAN POWER AMPLIFIER MODULE

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中文翻译

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RF5824 数据手册

Preliminary

RF5824

3.3V, DUAL-BAND WLAN

POWER AMPLIFIER MODULE

Typical Applications

• IEEE802.11a/b/g and IEEE802.11n WLAN • 2.5GHz and 5GHz ISM Bands Applications

Applications

• Wireless LAN Systems

• Single-Chip RF Power Amplifier Module

• Portable Battery-Powered Equipment

Product Description

0.90

4.00 ± 0.10

± 0.10

The RF5824 is a linear, medium-power, high-efficiency

dual-band power amplifier module designed specifically

for battery-operated WLAN applications such as PC

cards, mini-PCI and compact flash applications. It is also

designed to meet IEEE802.11a/b/g, IEEE802.11n, FCC,

and ETSI requirements for operation within the 2.4GHz to

2.5GHz and 4.90GHz to 5.85GHz bands. The device is

manufactured on an advanced InGaP GaAs Heterojunc-

tion Bipolar Transistor process, and has been designed

for use as the final RF amplifier in both the 2GHz and

5GHz WLAN and other spread-spectrum transmitters.

4.00

± 0.10

-C-

Shaded area indicates pin 1.

SEATING

PLANE

2.44

0.400

± 0.100

SCALE:

NONE

The device is packaged in

QFN, 24-pin,

2.44

4mmx4mmx0.9mm plastic package with back side

ground. The RF5824 operates from a single supply and

will be easily incorporated into WLAN and other designs

with minimal external components.

0.10 M C

0.025

± 0.020

Dimensions in mm.

0.080 C

0.500 TYP

Optimum Technology Matching® Applied

Package Style: QFN, 24-pin, 4mmx4mm

Si BJT

GaAs HBT

SiGe HBT

GaN HEMT

GaAs MESFET

Si Bi-CMOS

InGaP/HBT

Si CMOS

Features

SiGe Bi-CMOS

• 5GHz Integrated Output Match

• 11a Current 155mA Typical

• 11g Current 120mA Typical

• Gain 27dB Typical for 11a and 11g

• EVM 3.5% TYP for 11g and

1^stStage

Bias

2^ndStage

Bias

RFOUT/

VCC2LB

RFINLB

GND

Pdetect

Circuit_LB

Input

Match

Interstage

Match

RFOUT/

VCC2LB

3.5% TYP for 11a (@ P

11a/g=17dBm)

OUT

16 GND

• Single Supply Voltage 2.8V to 4.0V

GND

15 RFOUTHB

14 RFOUTHB

13 VCC3HB

Ordering Information

RF5824

Input

Match

Interstage

Match

Interstage

Match

Output

Match

RFINHB

VREGHB

3.3V, Dual-Band WLAN Power Amplifier Module

1^st, 2^nd, and 3^rd

Stage Bias

Pdetect

Circuit_HB

RF5824PCBA-41X Fully Assembled Evaluation Board

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Functional Block Diagram

Rev A0 061002

8-1

中文翻译

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与RF5824相关器件

型号	品牌	获取价格	描述	数据表
RF5824PCBA-41X	RFMD	获取价格	3.3V, DUAL-BAND WLAN POWER AMPLIFIER MODULE
RF-5832H-PA101	HARRIS	获取价格	125 WATT HF POWER AMPLIFIER
RF-5833H-PA001	HARRIS	获取价格	150 WATT HF/VHF POWER AMPLIFIERS
RF-5833H-PA002	HARRIS	获取价格	150 WATT HF/VHF POWER AMPLIFIERS
RF-5834H-PA001	HARRIS	获取价格	400 WATT HF POWER AMPLIFIER
RF-5845H-PP101	HARRIS	获取价格	DIGITAL PRE/POSTSELECTOR
RF-5850-PS001	HARRIS	获取价格	POWER SUPPLY BATTERY ELIMINATOR
RF-5850-PS002	HARRIS	获取价格	POWER SUPPLY BATTERY ELIMINATOR
RF-5853	HARRIS	获取价格	LITHIUM ION BATTERY CHARGER FOR HANDHELD BATTERIES
RF-5853-01	HARRIS	获取价格	LITHIUM ION BATTERY CHARGER FOR HANDHELD BATTERIES

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