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RF5322 PDF预览

RF5322

更新时间: 2024-01-15 15:06:57
品牌 Logo 应用领域
威讯 - RFMD 放大器功率放大器
页数 文件大小 规格书
12页 691K
描述
3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER

RF5322 数据手册

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RF5322  
3V TO 4.5V, 2.4GHz TO 2.5GHz  
LINEAR POWER AMPLIFIER  
Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.4mm  
8
7
Features  
RF IN  
VREG  
1
2
6
5
VC2  
Single Power Supply 3.0V to  
3.6V  
Input  
Match  
Interstage  
Match  
Output  
Match  
24dB Minimum Gain  
Input and Output Matched to  
50  
Power  
Detector  
RF OUT  
Bias Circuit  
2400MHz to 2500MHz Fre-  
quency Range  
3
4
+18dBm @ <2.5% typ EVM,  
120mA @ 3.3V  
CC  
Applications  
IEEE802.11b/g/n WiFi Appli-  
cations  
Functional Block Diagram  
2.5GHz ISM Band Applica-  
tions  
Product Description  
The RF5322 is a linear, medium-power, high-efficiency, two-stage amplifier IC  
designed specifically for battery-powered WiFi applications such as PC cards, mini  
PCI, and compact flash applications. The device is manufactured on an advanced  
InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has  
been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-  
spectrum transmitters. The device is provided in a 2.2mmx2.2mm, 8-pin, QFN with  
a backside ground. The RF5322 is designed to maintain linearity over a wide range  
of supply voltages and power outputs. The RF5322 also has built-in power detector  
and incorporates the input, interstage, and output matching components internally  
which reduces the component count used externally and makes it easier to incorpo-  
rate on any design.  
Commercial and Consumer  
Systems  
Portable Battery-Powered  
Equipment  
Spread-Spectrum and MMDS  
Systems  
Ordering Information  
RF5322  
Standard 25 piece bag  
RF5322SR  
RF5322TR7  
RF5322PCK-410  
Standard 100 piece reel  
Standard 2500 piece reel  
Fully assembled evaluation board tuned for 2.4 to 2.5 GHz  
and 5 piece loose samples  
Optimum Technology Matching® Applied  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
Si BJT  
GaN HEMT  
RF MEMS  
LDMOS  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
DS110618  
1 of 12  

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