Proposed
RF3802
GaAs HBT PRE-DRIVER AMPLIFIER
0
Typical Applications
• GaAs HBT Pre-Driver for Basestation Amplifiers • Class AB Operation for GSM/EDGE/CDMA
• Power Amplifier Stage for Commercial Wireless
Infrastructure
Transmitter Applications
Product Description
-A-
0.0025
Pin 1
The RF3802 is specifically designed for wireless infra-
structure applications. Using a highly reliable GaAs HBT
fabrication process, this high-performance dual-stage
amplifier achieves high output power over a broad fre-
quency range. The RF3802 amplifier also provides excel-
lent efficiency and thermal stability through the use of a
thermally-enhanced surface-mount AlN package. Ease of
integration is accomplished through the incorporation of
an optimized evaluation board design provided to achieve
proper 50Ω operation. Various evaluation board bias con-
figurations are available to address a broad range of wire-
less infrastructure applications:
0.005
A
Shaded circle designates
pin 1 location.
0.200 REF
0.024
0.180
REF
0.198
0.236
0.156
Dimensions in inches.
0.025
R.008
0.050
TYP
0.050
REF
•
•
•
AMPS/GSM850/EDGE850
GSM900/EDGE900
IS-95/CDMA2000/AMPS
0.0780
MAX
0.028
TYP
0.020
7 PL
Optimum Technology Matching® Applied
Package Style: AlN
Si BJT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
9
Si Bi-CMOS
InGaP/HBT
Si CMOS
Features
SiGe Bi-CMOS
• 5W Output Power
• High Linearity
• 35% Power-Added Efficiency
• AlN Packaging
VCC1
VREF
1
2
3
4
8
7
6
5
RF OUT/VCC2
RF OUT/VCC2
RF OUT/VCC2
RF OUT/VCC2
Bias
Circuit
• Broadband Platform Design Approach
RF IN
V_BIAS
Ordering Information
PACKAGE BASE
GND
RF3802
GaAs HBT Pre-Driver Amplifier
RF3802PCBA-410 Fully Assembled Evaluation Board - GSM850
RF3802PCBA-411 Fully Assembled Evaluation Board - GSM900
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A1 040927
4-631