Datasheet > RF3800PCBA-416

RF3800PCBA-416

更新时间： 2024-11-10 22:31:27

品牌	Logo	应用领域
威讯 - RFMD		放大器驱动
页数	文件大小	规格书
2页	61K
描述
GaAs HBT PRE-DRIVER AMPLIFIER

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中文翻译

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数据手册

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RF3800PCBA-416 数据手册

Proposed

RF3800

GaAs HBT PRE-DRIVER AMPLIFIER

Typical Applications

• Pre-Driver for 450MHz Basestation Amplifiers

• Class AB Operation for Cellular Radio and

• PA Stage for Commercial Wireless Infrastructure Wireless Local Loop

Product Description

-A-

0.0025

Pin 1

The RF3800 is specifically designed for wireless infra-

structure applications in 450MHz. Using a highly reliable

0.005

0.200 REF

0.024

GaAs HBT fabrication process, this high-performance

single-stage amplifier achieves high output power over a

0.180

REF

0.198

broad frequency range. The RF3800 also provides excel-

lent efficiency and thermal stability through the use of a

thermally-enhanced surface-mount AlN package. Ease of

integration is accomplished through the incorporation of

an optimized evaluation board design provided to achieve

proper 50Ω operation. Various evaluation board bias con-

figurations are available to address a broad range of wire-

less infrastructure applications.

0.236

0.156

0.025

R.008

0.050

TYP

0.050

REF

0.0780

MAX

0.028

TYP

0.020

7 PL

Optimum Technology Matching® Applied

Package Style: AlN

Si BJT

GaAs HBT

SiGe HBT

GaN HEMT

GaAs MESFET

Si Bi-CMOS

InGaP/HBT

Si CMOS

Features

SiGe Bi-CMOS

• 6W Output Power

• High Linearity

• 45% Power-Added Efficiency

• Thermally-Enhanced Packaging

VREF

VBIAS

Bias

Circuit

• Broadband Platform Design Approach

RF OUT

RF IN

5 NC

Ordering Information

PACKAGE BASE

GND

RF3800

GaAs HBT Pre-Driver Amplifier

RF3800PCBA-416 Fully Assembled Evaluation Board

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Functional Block Diagram

Rev A1 040827

4-623

中文翻译

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