RF3800GaAs
HBT Pre-Driver
Amplifier
RF3800
GaAs HBT PRE-DRIVER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: AlN
3
Features
6W Output Power
High Linearity
VREF
NC
1
2
3
4
8
7
6
VBIAS
Bias
Circuit
45% Power-Added Efficiency
RF OUT
RF OUT
Thermally-Enhanced AlN Packag-
ing
RF IN
NC
150MHz to 960MHz Operation
5 NC
5V to 8V Supply with Adjustable
Bias
PACKAGE BASE
GND
Applications
Driver for 450MHz and 850MHz
Basestation Amplifiers
Functional Block Diagram
PA Stage for Commercial Wire-
less Infrastructure
Product Description
The RF3800 is specifically designed for wireless infrastructure applications at
450MHz and 850MHz. Using a highly reliable GaAs HBT fabrication process, this
high-performance single-stage amplifier achieves high output power over a broad
frequency range. The RF3800 also provides excellent efficiency and thermal stabil-
ity through the use of a thermally-enhanced surface-mount AlN package. Ease of
integration is accomplished through the incorporation of an optimized evaluation
board design provided to achieve proper 50Ω operation. Various evaluation board
configurations are available to address a broad range of wireless infrastructure
applications.
Ordering Information
RF3800
GaAs HBT Pre-Driver Amplifier
RF3800PCBA-416 Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
9
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A9 DS070130
3-107