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RF3800 PDF预览

RF3800

更新时间: 2024-11-10 22:31:27
品牌 Logo 应用领域
威讯 - RFMD 放大器驱动
页数 文件大小 规格书
2页 61K
描述
GaAs HBT PRE-DRIVER AMPLIFIER

RF3800 数据手册

 浏览型号RF3800的Datasheet PDF文件第2页 
Proposed  
RF3800  
GaAs HBT PRE-DRIVER AMPLIFIER  
0
Typical Applications  
• Pre-Driver for 450MHz Basestation Amplifiers  
• Class AB Operation for Cellular Radio and  
PA Stage for Commercial Wireless Infrastructure Wireless Local Loop  
Product Description  
-A-  
0.0025  
Pin 1  
The RF3800 is specifically designed for wireless infra-  
structure applications in 450MHz. Using a highly reliable  
0.005  
A
0.200 REF  
0.024  
GaAs HBT fabrication process, this high-performance  
single-stage amplifier achieves high output power over a  
0.180  
REF  
0.198  
broad frequency range. The RF3800 also provides excel-  
lent efficiency and thermal stability through the use of a  
thermally-enhanced surface-mount AlN package. Ease of  
integration is accomplished through the incorporation of  
an optimized evaluation board design provided to achieve  
proper 50operation. Various evaluation board bias con-  
figurations are available to address a broad range of wire-  
less infrastructure applications.  
0.236  
0.156  
0.025  
R.008  
0.050  
TYP  
0.050  
REF  
0.0780  
MAX  
0.028  
TYP  
0.020  
7 PL  
Optimum Technology Matching® Applied  
Package Style: AlN  
Si BJT  
GaAs HBT  
SiGe HBT  
GaN HEMT  
GaAs MESFET  
9
Si Bi-CMOS  
InGaP/HBT  
Si CMOS  
Features  
SiGe Bi-CMOS  
• 6W Output Power  
• High Linearity  
• 45% Power-Added Efficiency  
• Thermally-Enhanced Packaging  
VREF  
NC  
1
8
7
6
VBIAS  
Bias  
Circuit  
• Broadband Platform Design Approach  
2
3
4
RF OUT  
RF OUT  
RF IN  
NC  
5 NC  
Ordering Information  
PACKAGE BASE  
GND  
RF3800  
GaAs HBT Pre-Driver Amplifier  
RF3800PCBA-416 Fully Assembled Evaluation Board  
RF Micro Devices, Inc.  
7628 Thorndike Road  
Greensboro, NC 27409, USA  
Tel (336) 664 1233  
Fax (336) 664 0454  
http://www.rfmd.com  
Functional Block Diagram  
Rev A1 040827  
4-623  

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