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RF3315_1 PDF预览

RF3315_1

更新时间: 2024-12-01 04:08:27
品牌 Logo 应用领域
威讯 - RFMD 放大器
页数 文件大小 规格书
14页 381K
描述
BROADBAND HIGH LINEARITY AMPLIFIER

RF3315_1 数据手册

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RF3315Broad-  
band High Lin-  
earity Amplifier  
RF3315  
BROADBAND HIGH LINEARITY AMPLIFIER  
RoHS Compliant & Pb-Free Product  
Package Style: SOT89  
Features  
4
„ 300MHz to 3GHz  
„ +40dBm Output IP3  
„ 12.5dB Gain at 2.0GHz  
„ +23dBm P1dB  
1
2
3
„ 3.0dB Typical Noise Figure at  
2.0GHz  
„ Single 5V Power Supply  
Applications  
„ Basestation Applications  
„ Cellular and PCS Systems  
„ WLL, W-CDMA Systems  
Functional Block Diagram  
Product Description  
„ Final PA for Low-Power Applica-  
tions  
The RF3315 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) ampli-  
fier packaged in a low-cost surface-mount package. This amplifier is ideal for use in  
applications requiring high-linearity and low noise figure over the 300MHz to 3GHz  
frequency range. The RF3315 operates from a single 5V power supply.  
Ordering Information  
RF3315  
Broadband High Linearity Amplifier  
RF3315PCBA-410 Fully Assembled Evaluation Board (2GHz)  
RF3315PCBA-411 Fully Assembled Evaluation Board (900MHz)  
Optimum Technology Matching® Applied  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
GaAs pHEMT  
Si CMOS  
Si BJT  
GaN HEMT  
9
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
Rev A10 DS050318  
1 of 14  

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