Datasheet > RF3315_06

RF3315_06

更新时间： 2024-12-01 04:08:27

品牌	Logo	应用领域
威讯 - RFMD		放大器
页数	文件大小	规格书
12页	224K
描述
BROADBAND HIGH LINEARITY AMPLIFIER

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中文翻译

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RF3315_06 数据手册

RF3315

BROADBAND HIGH LINEARITY AMPLIFIER

RoHS Compliant & Pb-Free Product

Typical Applications

• Basestation Applications

• Cellular and PCS Systems

• WLL, W-CDMA Systems

• Final PA for Low-Power Applications

Product Description

The RF3315 is a high-efficiency GaAs Heterojunction

Bipolar Transistor (HBT) amplifier packaged in a low-cost

surface-mount package. This amplifier is ideal for use in

applications requiring high-linearity and low noise figure

over the 300MHz to 3GHz frequency range. The RF3315

operates from a single 5V power supply.

1.04

0.80

0.50

0.30

1.60

1.40

3.10

2.90

4.60

4.40

0.48

0.36

2 PL

2.60

2.40

Dimensions in mm.

1.80

1.45

Shaded lead is pin 1.

1.75

1.40

0.53

0.41

0.43

0.38

Optimum Technology Matching® Applied

Package Style: SOT89

Si BJT

GaAs HBT

SiGe HBT

GaN HEMT

GaAs MESFET

Si Bi-CMOS

InGaP/HBT

Si CMOS

Features

SiGe Bi-CMOS

• 300MHz to 3GHz

• +40dBm Output IP3

• 12.5dB Gain at 2.0GHz

• +23dBm P1dB

• 3.0dB Typical Noise Figure at 2.0GHz

• Single 5V Power Supply

Ordering Information

RF3315

Broadband High Linearity Amplifier

RF3315PCBA-410Fully Assembled Evaluation Board (2GHz)

RF3315PCBA-411Fully Assembled Evaluation Board (900MHz)

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Functional Block Diagram

Rev A10 050318

4-557

12 3 4 5 6 7...12

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与RF3315_06相关器件

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RF3320PCBA	RFMD	获取价格	CABLE REVERSE PATH PROGRAMMABLE GAIN AMPLIFIER
RF3321	RFMD	获取价格	REVERSE PATH HIGH OUTPUT POWER PROGRAMMABLE GAIN AMPLIFIER
RF3321PCBA	RFMD	获取价格	REVERSE PATH HIGH OUTPUT POWER PROGRAMMABLE GAIN AMPLIFIER
RF3322	RFMD	获取价格	CABLE REVERSE PATH PROGRAMMABLE GAIN AMPLIFIER