RF3300-3
3V 1900MHz LINEAR AMPLIFIER MODULE
0
Typical Applications
• 3V CDMA US-PCS Handsets
• 3V CDMA2000/1X PCS Handsets
• Spread-Spectrum Systems
• Designed for Compatibility with Qualcomm
Chipsets
Product Description
The RF3300-3 is a high-power, high-efficiency linear
amplifier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA handheld digital cellular equipment, spread-
spectrum systems, and other applications in the
1850MHz to 1910MHz band. The RF3300-3 has a digital
control line for low power application to reduce the cur-
rent drain. The device is self-contained with 50Ω input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. This amplifier con-
tains a temperature compensating bias circuit for
improved performance over temperature.
7.375 TYP
1
6.775
6.575 TYP
5.875 TYP
5.075 TYP
4.375 TYP
NOTES:
Nominal thickness, 1.55
mm.
3.575 TYP
2.875 TYP
Note orientation of Pin 1.
2.075 TYP
0.925 TYP
0.125 TYP
0.000
Dimensions in mm.
Bottom View
Optimum Technology Matching® Applied
Package Style: Module (6mmx7.5mm)
Si BJT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
9
Si Bi-CMOS
InGaP/HBT
Si CMOS
Features
SiGe Bi-CMOS
9
• Single 3V Supply with Internal V
REF
• Integrated Power Detector
• 25dB Linear Gain
• 40mA Idle Current (Low Power Mode)
• Temperature Compensating Bias Circuit
• Integrated PA Enable Switch
VCC3
GND
1
2
3
4
5
12
11
10 PDET_OUT
Pwr
Det
9
VCC2
Bias
GND
8 RF OUT
Ordering Information
RF IN
VCC1
7
6
GND
GND
RF3300-3
3V 1900MHz Linear Amplifier Module
RF3300-3 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Greensboro, NC 27409, USA
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A5 030612
2-547