Datasheet > RF3223_1

RF3223_1

更新时间： 2024-12-01 04:08:27

品牌	Logo	应用领域
威讯 - RFMD		驱动器放大器
页数	文件大小	规格书
10页	284K
描述
HIGH LINEARITY/DRIVER AMPLIFIER

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中文翻译

获取价格

数据手册

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RF3223_1 数据手册

RF3223High

Linear-

ity/Driver

Amplifier

RF3223

HIGH LINEARITY/DRIVER AMPLIFIER

RoHS Compliant & Pb-Free Product

Package Style: QFN, 12-Pin, 3 x 3

Features

500MHz to 2000MHz

+44.0dBm Output IP3

GND 1

RF IN 2

GND 3

9 GND

+14.0dB Gain at 850MHz

+11.4dBm Input P1dB at

850MHz

8 RF OUT

7 GND

3.4dB Noise Figure at 850MHz

Single 5V Power Supply

Applications

Basestation Applications

Cellular and PCS Systems

CDMA, W-CDMA Systems

GSM/EDGE Systems

Functional Block Diagram

Product Description

The RF3223 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT)

amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for

use in applications requiring high-linearity and low noise figure over the 500MHz to

3GHz frequency range. The RF3223 operates from a single 5V power supply, and is

assembled in an economical 3mmx3mm QFN package.

Final PA for Low-Power Applica-

tions

Ordering Information

RF3223

High Linearity/Driver Amplifier

RF3223PCBA-41X Fully Assembled Evaluation Board

Optimum Technology Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Rev A1 DS050822

1 of 10

12 3 4 5 6 7...10

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