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RF3223 PDF预览

RF3223

更新时间: 2024-12-01 04:08:27
品牌 Logo 应用领域
威讯 - RFMD 驱动器放大器射频微波
页数 文件大小 规格书
8页 155K
描述
HIGH LINEARITY/DRIVER AMPLIFIER

RF3223 数据手册

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RF3223  
HIGH LINEARITY/DRIVER AMPLIFIER  
0
RoHS Compliant & Pb-Free Product  
Typical Applications  
• Basestation Applications  
• Cellular and PCS Systems  
• CDMA, W-CDMA Systems  
• GSM/EDGE Systems  
• Final PA for Low-Power Applications  
Product Description  
2 PLCS  
0.05 C  
0.90  
0.85  
2 PLCS  
0.10 C A  
0.70  
0.65  
The RF3223 is a high-efficiency GaAs Heterojunction  
Bipolar Transistor (HBT) amplifier packaged in a low-cost  
surface-mount package. This amplifier is ideal for use in  
applications requiring high-linearity and low noise figure  
over the 500MHz to 3GHz frequency range. The RF3223  
operates from a single 5V power supply, and is assem-  
bled in an economical 3mmx3mm QFN package.  
-A-  
3.00  
0.05  
0.00  
0.10 C B  
2 PLCS  
3.00  
12°  
MAX  
2 PLCS  
0.10 C B  
SEATING  
PLANE  
-B-  
Dimensions in mm.  
-C-  
B
2.75 SQ.  
0.10 C A  
2 PLCS  
Shaded lead is pin 1.  
0.10 M C A  
0.60  
0.24  
TYP  
0.30  
0.18  
PIN 1 ID  
R.20  
0.75  
0.50  
1.25  
0.95  
SQ.  
0.50  
Optimum Technology Matching® Applied  
Package Style: QFN, 12-Pin, 3x3  
Si BJT  
GaAs HBT  
SiGe HBT  
GaN HEMT  
GaAs MESFET  
9
Si Bi-CMOS  
InGaP/HBT  
Si CMOS  
Features  
SiGe Bi-CMOS  
• 500MHz to 2000MHz  
• +44.0dBm Output IP3  
• +14.0dB Gain at 850MHz  
• +11.4dBm Input P1dB at 850MHz  
• 3.4dB Noise Figure at 850MHz  
• Single 5V Power Supply  
12  
11  
10  
GND  
1
2
3
9
8
7
GND  
RF IN  
GND  
RF OUT  
GND  
Ordering Information  
4
5
6
RF3223  
High Linearity/Driver Amplifier  
RF3223PCBA-41X  
Fully Assembled Evaluation Board  
RF Micro Devices, Inc.  
7628 Thorndike Road  
Greensboro, NC 27409, USA  
Tel (336) 664 1233  
Fax (336) 664 0454  
http://www.rfmd.com  
Functional Block Diagram  
Rev A1 050822  
4-553  

RF3223 替代型号

型号 品牌 替代类型 描述 数据表
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