Preliminary
RF2175
3V 400MHZ LINEAR AMPLIFIER
2
Typical Applications
• 3V TETRA Cellular Handsets
• 3V CDMA Cellular Handsets
• Portable Battery-Powered Equipment
2
Product Description
The RF2175 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in TETRA
hand-held digital cellular equipment, spread-spectrum
systems, and other applications in the 380MHz to
512MHz band. The RF2175 has an analog bias control
voltage to maximize efficiency. The device is self-con-
tained with 50Ω input, and the output can be easily
matched to obtain optimum power, efficiency, and linear-
ity characteristics. The package is a small SSOP-16 plas-
tic with backside ground.
-A-
0.012
0.008
0.004
0.002
EEXPxOpSoEsDed Heat
SiHnEkATSINK
0.154
Note 3
0.196
0.189
0.123
0.107
0.025
0.063
0.057
0.087
0.071
0.237
NOTES:
1. Shaded lead in Pin 1.
2. Lead coplanarity - 0.003 with respect to datum "A".
3. Lead standoff is specified from the lowest point on the
package underside.
8° MAX
0° MIN
0.035
0.016
0.010
0.007
Optimum Technology Matching® Applied
Package Style: SSOP-16 Slug
Si BJT
GaAs MESFET
üGaAs HBT
SiGe HBT
Si Bi-CMOS
Si CMOS
Features
• Single 3V Supply
VCC
LTUNE
NC
1
2
3
4
5
6
7
8
16 VBIAS
• 31.8dBm Linear Output Power
• 37.5dB Linear Gain
Bias
15
14 RF OUT
• 30% Linear Efficiency
Q1C
13 RF OUT
• On-Board Power Down Mode
• 380MHz to 512MHz Operation
GND1
RF IN
12 RF OUT
11
10
9
Ordering Information
RF2175
3V 400MHz Linear Amplifier
VREG
RF2175 PCBA
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A6 010718
2-243