RF2173
3V GSM POWER AMPLIFIER
0
RoHS Compliant & Pb-Free Product
Typical Applications
• 3V GSM Cellular Handsets
• 3V Dual-Band/Triple-Band Handsets
• GPRS Compatible
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
Product Description
The RF2173 is a high power, high efficiency power ampli-
fier module offering high performance in GSM or GPRS
applications. The device is manufactured on an advanced
GaAs HBT process, and has been designed for use as
the final RF amplifier in GSM hand-held digital cellular
equipment and other applications in the 800MHz to
950MHz band. On-board power control provides over
70dB of control range with an analog voltage input, and
provides power down with a logic “low” for standby opera-
tion. The device is self-contained with 50Ω input and the
output can be easily matched to obtain optimum power
and efficiency characteristics. The RF2173 can be used
together with the RF2174 for dual-band operation. The
device is packaged in an ultra-small plastic package, min-
imizing the required board space.
0.10
2 PLCS
C B
-B-
4.00
0.10
2 PLCS
C B
3.75
2.00
0.80
TYP
A
2
1.60
2 PLCS
1.50
SQ.
3.75
4.00
0.75
0.50
0.10
C A
0.10
2 PLCS
C A
2.00
INDEX AREA
2 PLCS
0.45
0.28
Dimensions in mm.
3.20
2 PLCS
0.10M C A B
Shaded pin is lead 1.
12°
MAX
1.00
0.90
C
0.05
0.05
0.00
0.75
0.65
Optimum Technology Matching® Applied
Package Style: QFN, 16-Pin, 4x4
Si BJT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
9
Si Bi-CMOS
InGaP/HBT
Si CMOS
Features
SiGe Bi-CMOS
• Single 2.7V to 4.8V Supply Voltage
• +36dBm Output Power at 3.5V
• 32dB Gain with Analog Gain Control
• 56% Efficiency
1
2
3
4
5
16
15
14
13
• 800MHz to 950MHz Operation
• Supports GSM and E-GSM
GND2
RF IN
GND1
12 RF OUT
11 RF OUT
10 RF OUT
9
Ordering Information
6
7
8
RF2173
3V GSM Power Amplifier
RF2173PCBA-41X Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A7 060921
2-265