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RF2173PCBA-41X PDF预览

RF2173PCBA-41X

更新时间: 2024-10-26 03:54:15
品牌 Logo 应用领域
威讯 - RFMD 放大器功率放大器GSM
页数 文件大小 规格书
14页 172K
描述
3V GSM POWER AMPLIFIER

RF2173PCBA-41X 数据手册

 浏览型号RF2173PCBA-41X的Datasheet PDF文件第2页浏览型号RF2173PCBA-41X的Datasheet PDF文件第3页浏览型号RF2173PCBA-41X的Datasheet PDF文件第4页浏览型号RF2173PCBA-41X的Datasheet PDF文件第5页浏览型号RF2173PCBA-41X的Datasheet PDF文件第6页浏览型号RF2173PCBA-41X的Datasheet PDF文件第7页 
RF2173  
3V GSM POWER AMPLIFIER  
0
RoHS Compliant & Pb-Free Product  
Typical Applications  
• 3V GSM Cellular Handsets  
• 3V Dual-Band/Triple-Band Handsets  
• GPRS Compatible  
• Commercial and Consumer Systems  
• Portable Battery-Powered Equipment  
Product Description  
The RF2173 is a high power, high efficiency power ampli-  
fier module offering high performance in GSM or GPRS  
applications. The device is manufactured on an advanced  
GaAs HBT process, and has been designed for use as  
the final RF amplifier in GSM hand-held digital cellular  
equipment and other applications in the 800MHz to  
950MHz band. On-board power control provides over  
70dB of control range with an analog voltage input, and  
provides power down with a logic “low” for standby opera-  
tion. The device is self-contained with 50Ω input and the  
output can be easily matched to obtain optimum power  
and efficiency characteristics. The RF2173 can be used  
together with the RF2174 for dual-band operation. The  
device is packaged in an ultra-small plastic package, min-  
imizing the required board space.  
0.10  
2 PLCS  
C B  
-B-  
4.00  
0.10  
2 PLCS  
C B  
3.75  
2.00  
0.80  
TYP  
A
2
1.60  
2 PLCS  
1.50  
SQ.  
3.75  
4.00  
0.75  
0.50  
0.10  
C A  
0.10  
2 PLCS  
C A  
2.00  
INDEX AREA  
2 PLCS  
0.45  
0.28  
Dimensions in mm.  
3.20  
2 PLCS  
0.10M C A B  
Shaded pin is lead 1.  
12°  
MAX  
1.00  
0.90  
C
0.05  
0.05  
0.00  
0.75  
0.65  
Optimum Technology Matching® Applied  
Package Style: QFN, 16-Pin, 4x4  
Si BJT  
GaAs HBT  
SiGe HBT  
GaN HEMT  
GaAs MESFET  
9
Si Bi-CMOS  
InGaP/HBT  
Si CMOS  
Features  
SiGe Bi-CMOS  
• Single 2.7V to 4.8V Supply Voltage  
• +36dBm Output Power at 3.5V  
• 32dB Gain with Analog Gain Control  
• 56% Efficiency  
1
2
3
4
5
16  
15  
14  
13  
• 800MHz to 950MHz Operation  
• Supports GSM and E-GSM  
GND2  
RF IN  
GND1  
12 RF OUT  
11 RF OUT  
10 RF OUT  
9
Ordering Information  
6
7
8
RF2173  
3V GSM Power Amplifier  
RF2173PCBA-41X Fully Assembled Evaluation Board  
RF Micro Devices, Inc.  
7628 Thorndike Road  
Greensboro, NC 27409, USA  
Tel (336) 664 1233  
Fax (336) 664 0454  
http://www.rfmd.com  
Functional Block Diagram  
Rev A7 060921  
2-265  

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