RF2131
HIGH EFFICIENCY AMPS/ETACS AMPLIFIER
2
Typical Applications
• AMPS/ETACS Cellular Handsets
• CDPD Portable Data Cards
• 900MHz ISM Band Equipment
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
2
Product Description
-A-
0.009
0.004
0.158
0.150
The RF2131 is a high-power, high-efficiency amplifier IC.
The device is manufactured on an advanced Gallium Ars-
enide Heterojunction Bipolar Transistor (HBT) process,
and has been designed for use as the final RF amplifier in
AMPS and ETACS handheld equipment, spread spec-
trum systems, CDPD, and other applications in the
800MHz to 950MHz band. On-board power control pro-
vides over 30dB of control range with an analog voltage
input, and provides power down with a logic "low" for
standby operation. Although it is intended for class C
operation, linear class AB operation can be achieved by
raising the bias level. The device is self-contained with
50Ω input and the output can be easily matched to obtain
optimum power and efficiency characteristics.
0.021
0.014
0.069
0.064
0.392
0.386
0.050
0.244
0.230
0.060
0.054
8° MAX
0° MIN
0.010
0.008
0.035
0.016
Optimum Technology Matching® Applied
Package Style: Standard Batwing
Si BJT
GaAs MESFET
üGaAs HBT
SiGe HBT
Si Bi-CMOS
Si CMOS
Features
• Single 4.0V to 7.0V Supply
• 1.2W Output Power
PC
NC
1
16 NC
• 25dB Gain With Analog Gain Control
• 64% Efficiency
BIAS
2
3
4
5
6
7
8
15 RF OUT
14 RF OUT
13 GND
VCC2
GND
GND
GND1
RF IN
VCC1
• Digitally Controlled Power Down Mode
• 800MHz to 950MHz Operation
12 GND
11 RF OUT
10 RF OUT
Ordering Information
RF2131
RF2131 PCBA
High Efficiency AMPS/ETACS Amplifier
Fully Assembled Evaluation Board
9
NC
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev B4 010417
2-99