RF2127
MEDIUM POWER LINEAR AMPLIFIER
2
Typical Applications
• DECT Cordless Applications
• PCS Communication Systems
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
2
Product Description
-A-
0.018
0.014
0.010
0.004
0.160
0.152
The RF2127 is a medium-power, high-efficiency, linear
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 1800MHz digital PCS phone transmitters
requiring linear amplification operating between
1800MHz and 1900MHz, with over 100mW transmitted
power. It will also function as the driver stage for the
RF2125 high power amplifier. A simple power down func-
tion is included for TDD operation.
0.200
0.192
0.050
0.248
0.232
0.059
0.057
8° MAX
0° MIN
0.0100
0.0076
0.0500
0.0164
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).
Optimum Technology Matching® Applied
Package Style: SOIC-8
Si BJT
GaAs MESFET
üGaAs HBT
SiGe HBT
Si Bi-CMOS
Si CMOS
Features
• Single 3.0V to 6.5V Supply
• 100mW Linear Output Power
• 25dB Small Signal Gain
• 30% Efficiency
BIAS
CIRCUITS
• Digitally Controlled Power Down Mode
• 1500MHz to 1900MHz Operation
VCC2
GND1
PD
1
8
7
6
5
VCC1
2
3
4
RF OUT
RF OUT
GND2
Ordering Information
RF IN
RF2127
RF2127 PCBA
Medium Power Linear Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A3 010720
2-79