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RF2119 PDF预览

RF2119

更新时间: 2024-10-25 22:24:11
品牌 Logo 应用领域
威讯 - RFMD 放大器射频微波功率放大器功效
页数 文件大小 规格书
8页 85K
描述
HIGH EFFICIENCY 2V POWER AMPLIFIER

RF2119 数据手册

 浏览型号RF2119的Datasheet PDF文件第2页浏览型号RF2119的Datasheet PDF文件第3页浏览型号RF2119的Datasheet PDF文件第4页浏览型号RF2119的Datasheet PDF文件第5页浏览型号RF2119的Datasheet PDF文件第6页浏览型号RF2119的Datasheet PDF文件第7页 
Preliminary  
RF2119  
HIGH EFFICIENCY 2V POWER AMPLIFIER  
2
Typical Applications  
Two-Way Pagers  
• 3V AMPS/ETACS Cellular Handsets  
• CDPD Portable Data Cards  
• Personal Digital Cellular  
• 915MHz ISM Band Equipment  
• Spread-Spectrum Systems  
2
Product Description  
The RF2119 is a high-power, high-efficiency amplifier IC  
targeting 2V to 4V handheld systems. The device is man-  
ufactured on an advanced Gallium Arsenide Heterojunc-  
tion Bipolar Transistor (HBT) process, and has been  
designed for use as the final RF amplifier in hand-held  
digital cellular equipment, spread spectrum systems, and  
other applications in the 800MHz to 960MHz band. The  
device is well suited for either CW or pulsed applications.  
At 3V, the RF2119 can deliver 29.5dBm of linear output  
power. The device is self-contained with 50input and  
the output can be easily matched to obtain optimum  
power, efficiency, and linearity characteristics. The pack-  
age is a PSSOP-16 with backside ground.  
-A-  
Exposed  
Heat Sink  
3.90  
± 0.10  
3
0.05 ± 0.05  
0.25 ± 0.05  
3
0.635  
2.70 ± 0.10  
4.90 ± 0.10  
6.00 ± 0.20  
1.40 ± 0.10  
1.70 ± 0.10  
8° MAX  
0° MIN  
0.24  
0.20  
0.60 ± 0.15  
Optimum Technology Matching® Applied  
Package Style: PSSOP-16  
Si BJT  
GaAs MESFET  
üGaAs HBT  
SiGe HBT  
Si Bi-CMOS  
Si CMOS  
Features  
• Single 2V to 5V Supply  
• 30dBm Output Power at 2.5V  
• 30dB Small Signal Gain  
• 53% Efficiency  
GND  
LMATCH  
GND  
1
2
3
4
5
6
7
8
16 BIAS2  
15 NC  
14 RF OUT  
13 RF OUT  
12 RF OUT  
11 NC  
VCC  
• On-board Power Down Mode  
• 800MHz to 960MHz Operation  
GND1  
RF IN  
GND  
10 NC  
BIAS  
CIRCUITS  
Ordering Information  
BIAS1  
9 VPC  
RF2119  
RF2119 PCBA  
High Efficiency 2V Power Amplifier  
Fully Assembled Evaluation Board  
PACKAGE BASE  
GND  
RF Micro Devices, Inc.  
7628 Thorndike Road  
Greensboro, NC 27409, USA  
Tel (336) 664 1233  
Fax (336) 664 0454  
http://www.rfmd.com  
Functional Block Diagram  
Rev A8 010720  
2-55  

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