Preliminary
RF2119
HIGH EFFICIENCY 2V POWER AMPLIFIER
2
Typical Applications
• Two-Way Pagers
• 3V AMPS/ETACS Cellular Handsets
• CDPD Portable Data Cards
• Personal Digital Cellular
• 915MHz ISM Band Equipment
• Spread-Spectrum Systems
2
Product Description
The RF2119 is a high-power, high-efficiency amplifier IC
targeting 2V to 4V handheld systems. The device is man-
ufactured on an advanced Gallium Arsenide Heterojunc-
tion Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 960MHz band. The
device is well suited for either CW or pulsed applications.
At 3V, the RF2119 can deliver 29.5dBm of linear output
power. The device is self-contained with 50Ω input and
the output can be easily matched to obtain optimum
power, efficiency, and linearity characteristics. The pack-
age is a PSSOP-16 with backside ground.
-A-
Exposed
Heat Sink
3.90
± 0.10
3
0.05 ± 0.05
0.25 ± 0.05
3
0.635
2.70 ± 0.10
4.90 ± 0.10
6.00 ± 0.20
1.40 ± 0.10
1.70 ± 0.10
8° MAX
0° MIN
0.24
0.20
0.60 ± 0.15
Optimum Technology Matching® Applied
Package Style: PSSOP-16
Si BJT
GaAs MESFET
üGaAs HBT
SiGe HBT
Si Bi-CMOS
Si CMOS
Features
• Single 2V to 5V Supply
• 30dBm Output Power at 2.5V
• 30dB Small Signal Gain
• 53% Efficiency
GND
LMATCH
GND
1
2
3
4
5
6
7
8
16 BIAS2
15 NC
14 RF OUT
13 RF OUT
12 RF OUT
11 NC
VCC
• On-board Power Down Mode
• 800MHz to 960MHz Operation
GND1
RF IN
GND
10 NC
BIAS
CIRCUITS
Ordering Information
BIAS1
9 VPC
RF2119
RF2119 PCBA
High Efficiency 2V Power Amplifier
Fully Assembled Evaluation Board
PACKAGE BASE
GND
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A8 010720
2-55