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RF2115LPCBA PDF预览

RF2115LPCBA

更新时间: 2024-10-25 22:24:11
品牌 Logo 应用领域
威讯 - RFMD 放大器高功率电源
页数 文件大小 规格书
8页 104K
描述
HIGH POWER UHF AMPLIFIER

RF2115LPCBA 数据手册

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RF2115L  
HIGH POWER UHF AMPLIFIER  
2
Typical Applications  
• Analog Communication Systems  
• 400MHz Industrial Radios  
• Analog Cellular Systems (AMPS & TACS) • Driver Stage for Higher Power Applications  
2
• 900MHz Spread-Spectrum Systems  
• Portable Battery-Powered Equipment  
.258  
.242  
.075  
.065  
Product Description  
The RF2115L is a high power amplifier IC. The device is  
manufactured on an advanced Gallium Arsenide Hetero-  
junction Bipolar Transistor (HBT) process, and has been  
designed for use as the final RF amplifier in analog cellu-  
lar phone transmitters or ISM applications operating at  
915MHz. The device is packaged in a 16-lead ceramic  
quad leadless chip carrier with a backside ground. The  
device is self-contained with the exception of the output  
matching network and power supply feed line. A two-bit  
digital control provides 4 levels of power control, in 10dB  
steps.  
1
.258  
.242  
.150  
.050  
.022  
.018  
R.008  
.050  
.025  
.033  
.017  
.098  
.098  
Optimum Technology Matching® Applied  
Package Style: QLCC-16  
Si BJT  
GaAs MESFET  
üGaAs HBT  
SiGe HBT  
Si Bi-CMOS  
Si CMOS  
Features  
• Single 5V to 6.5V Supply  
• Up to 1.0W CW Output Power  
• 33dB Small Signal Gain  
• 48% Efficiency  
1
16  
15  
14  
VCC3  
VCC1  
GND  
PD  
2
3
4
5
13 RF OUT  
12 GND  
BIAS  
CIRCUIT  
• Digitally Controlled Output Power  
• Small Package Outline (0.25" x 0.25")  
11 RF OUT  
10 RF OUT  
GAIN CONTROL  
Ordering Information  
6
7
8
9
RF2115L  
High Power UHF Amplifier  
RF2115L PCBA Fully Assembled Evaluation Board  
RF Micro Devices, Inc.  
7625 Thorndike Road  
Greensboro, NC 27409, USA  
Tel (336) 664 1233  
Fax (336) 664 0454  
http://www.rfmd.com  
Functional Block Diagram  
Rev B1 010329  
2-39  

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