Datasheet > RF2115L

RF2115L

更新时间： 2024-10-25 22:24:11

品牌	Logo	应用领域
威讯 - RFMD		放大器高功率电源
页数	文件大小	规格书
8页	104K
描述
HIGH POWER UHF AMPLIFIER

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RF2115L 数据手册

RF2115L

HIGH POWER UHF AMPLIFIER

Typical Applications

• Analog Communication Systems

• 400MHz Industrial Radios

• Analog Cellular Systems (AMPS & TACS) • Driver Stage for Higher Power Applications

• 900MHz Spread-Spectrum Systems

• Portable Battery-Powered Equipment

.258

.242

.075

.065

Product Description

The RF2115L is a high power amplifier IC. The device is

manufactured on an advanced Gallium Arsenide Hetero-

junction Bipolar Transistor (HBT) process, and has been

designed for use as the final RF amplifier in analog cellu-

lar phone transmitters or ISM applications operating at

915MHz. The device is packaged in a 16-lead ceramic

quad leadless chip carrier with a backside ground. The

device is self-contained with the exception of the output

matching network and power supply feed line. A two-bit

digital control provides 4 levels of power control, in 10dB

steps.

.258

.242

.150

.050

.022

.018

R.008

.050

.025

.033

.017

.098

Optimum Technology Matching® Applied

Package Style: QLCC-16

Si BJT

GaAs MESFET

ü^{GaAs HBT}

SiGe HBT

Si Bi-CMOS

Si CMOS

Features

• Single 5V to 6.5V Supply

• Up to 1.0W CW Output Power

• 33dB Small Signal Gain

• 48% Efficiency

VCC3

VCC1

GND

13 RF OUT

12 GND

BIAS

CIRCUIT

• Digitally Controlled Output Power

• Small Package Outline (0.25" x 0.25")

11 RF OUT

10 RF OUT

GAIN CONTROL

Ordering Information

RF2115L

High Power UHF Amplifier

RF2115L PCBA Fully Assembled Evaluation Board

RF Micro Devices, Inc.

7625 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Functional Block Diagram

Rev B1 010329

2-39

12 3 4 5 6 7 8

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