生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.83 | 配置: | SINGLE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 15 A |
最大漏源导通电阻: | 0.14 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RF1S15N08L9A | RENESAS |
获取价格 |
45A, 80V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
RF1S17N06LSM | RENESAS |
获取价格 |
17A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
RF1S17N06LSM9A | RENESAS |
获取价格 |
17A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
RF1S22N10SM | INTERSIL |
获取价格 |
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs | |
RF1S22N10SM | FAIRCHILD |
获取价格 |
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs | |
RF1S22N10SM9A | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Met | |
RF1S23N06LE | RENESAS |
获取价格 |
23A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA | |
RF1S23N06LESM | RENESAS |
获取价格 |
23A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
RF1S23N06LESM96 | RENESAS |
获取价格 |
RF1S23N06LESM96 | |
RF1S23N06LESM9A | RENESAS |
获取价格 |
23A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |