Datasheet > RF1K49221

RF1K49221

更新时间： 2024-09-23 22:31:19

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关光电二极管
页数	文件大小	规格书
8页	113K
描述
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET

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RF1K49221 数据手册

RF1K49221

Data Sheet

August 1999

File Number 4314.1

2.5A, 60V, 0.130 Ohm, ESD Rated, Dual

N-Channel LittleFET™ Power MOSFET

Features

• 2.5A, 60V

• r = 0.130Ω

The RF1K49221 Dual N-Channel power MOSFET is

manufactured using an advanced MegaFET process. This

process, which uses feature sizes approaching those of LSI

integrated circuits, gives optimum utilization of silicon,

resulting in outstanding performance. It is designed for use

in applications such as switching regulators, switching

converters, motor drivers, relay drivers, and low voltage bus

switches. This device can be operated directly from

integrated circuits.

DS(ON)

• 2kV ESD Protected

• Temperature Compensating PSPICE Model

• Thermal Impedance PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

The RF1K49221 incorporates ESD protection and is

designed to withstand 2kV (Human Body Model) of ESD.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA49221.

Symbol

Ordering Information

D1(8)

D1(7)

PART NUMBER

PACKAGE

BRAND

RF1K49221

MS-012AA

S1(1)

G1(2)

NOTE: When ordering, use the entire part number. For ordering in

tape and reel, add the suffix 96 to the part number, i.e. RF1K4922196.

D2(6)

D2(5)

S2(3)

G2(4)

Packaging

JEDEC MS-012AA

BRANDING DASH

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

LittleFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

8-136

12 3 4 5 6 7 8

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