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R1RP0416DGE-2LR PDF预览

R1RP0416DGE-2LR

更新时间: 2024-01-26 18:05:51
品牌 Logo 应用领域
瑞萨 - RENESAS 内存集成电路静态存储器光电二极管ISM频段
页数 文件大小 规格书
15页 100K
描述
4M High Speed SRAM (256-kword X 16-bit)

R1RP0416DGE-2LR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOJ
包装说明:SOJ, SOJ44,.44针数:44
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.53
Samacsys Confidence:4Samacsys Status:Released
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=2136215PCB Footprint:https://componentsearchengine.com/footprint.php?partID=2136215
Samacsys PartID:2136215Samacsys Image:https://componentsearchengine.com/Images/9/R1RP0416DGE-2PR.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/R1RP0416DGE-2PR.jpgSamacsys Pin Count:44
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Other
Samacsys Footprint Name:PRSJ0044DA-ASamacsys Released Date:2020-01-03 16:32:29
Is Samacsys:N最长访问时间:12 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J44
JESD-609代码:e6/e2长度:28.57 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:2
功能数量:1端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ44,.44
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):245
电源:5 V认证状态:Not Qualified
座面最大高度:3.55 mm最大待机电流:0.005 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.16 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN BISMUTH/TIN COPPER
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:20
宽度:10.16 mmBase Number Matches:1

R1RP0416DGE-2LR 数据手册

 浏览型号R1RP0416DGE-2LR的Datasheet PDF文件第2页浏览型号R1RP0416DGE-2LR的Datasheet PDF文件第3页浏览型号R1RP0416DGE-2LR的Datasheet PDF文件第4页浏览型号R1RP0416DGE-2LR的Datasheet PDF文件第5页浏览型号R1RP0416DGE-2LR的Datasheet PDF文件第6页浏览型号R1RP0416DGE-2LR的Datasheet PDF文件第7页 
R1RP0416D Series  
4M High Speed SRAM (256-kword × 16-bit)  
REJ03C0108-0100Z  
Rev. 1.00  
Mar.12.2004  
Description  
The R1RP0416D Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized  
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit  
designing technology. It is most appropriate for the application which requires high speed, high density  
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in  
400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.  
Features  
Single 5.0 V supply: 5.0 V ± 10%  
Access time: 12 ns (max)  
Completely static memory  
No clock or timing strobe required  
Equal access and cycle times  
Directly TTL compatible  
All inputs and outputs  
Operating current: 160 mA (max)  
TTL standby current: 40 mA (max)  
CMOS standby current: 5 mA (max)  
: 1.0 mA (max) (L-version)  
Data retention current: 0.5 mA (max) (L-version)  
Data retention voltage: 2 V (min) (L-version)  
Center VCC and VSS type pin out  
Ordering Information  
Type No.  
Access time  
12 ns  
Package  
R1RP0416DGE-2PR  
R1RP0416DGE-2LR  
R1RP0416DSB-2PR  
R1RP0416DSB-2LR  
400-mil 44-pin plastic SOJ (44P0K)  
12 ns  
12 ns  
400-mil 44-pin plastic TSOPII (44P3W-H)  
12 ns  
Rev.1.00, Mar.12.2004, page 1 of 13  

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